Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron by Obodnikov, V.I., Tishkovsky, E.G., Cherkov, A.G., Fedina, L.I.

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Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal by Antonova, I.V., Yang, D., Popov, V.P., Obodnikov, V.I., Misiuk, A.

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Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure by Bak-Misiuk, J., Antonova, I.V., Misiuk, A., Domagala, J., Popov, V.P., Obodnikov, V.I., Härtwig, J., Romano-Rodriguez, A., Bachrouri, A.

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Raman and photoluminescence investigations of the H + ion implanted silicon-on-insulator structure formed by hydrogen ion cut by Tyschenko, I.E, Talochkin, A.B, Kolesov, B.A, Zhuravlev, K.S, Obodnikov, V.I, Popov, V.P

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Hundred MeV heavy ion irradiation effect on boron diffusion in Si by Skuratov, V.A., Dinu, N., Antonova, I.V., Obodnikov, V.I.

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Donor center formation in hydrogen implanted silicon by Neustroev, E.P, Antonova, I.V, Stas, V.F, Popov, V.P, Obodnikov, V.I

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Redistribution of nitrogen implanted in the crystals of synthetic diamond by Cherepov, E.I., Tishkovsky, E.G., Obodnikov, V.I., Pal'yanov, Ju.N., Sokol, A.G., Sobolev, N.V.

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Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology by Antonova, I.V., Popov, V.P., Stas, V.F., Gutakovskii, A.K., Plotnikov, A.E., Obodnikov, V.I.

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Morphology of the [formula omitted] interface in the MBE-grown heterostructures analysed by SIMS depth profiling by Konarski, P., Herman, M.A., Kozhukhov, A.V., Obodnikov, V.I.

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Impact of high energy ion implantation on dopant distribution in silicon by Neustroev, E.P, Antonova, I.V, Obodnikov, V.I, Popov, V.P, Skuratov, V.A, Smagulova, S.A, Didyk, A.Yu

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Distribution of impurities implanted in InSb and InAs before and after annealing by Gerasimenko, N.N., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I., Verner, I.V.

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SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing by Gerasimenko, N.N., Khryashchev, G.S., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I.

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Silicon avalanche diodes for direct detection of nuclear particles by Chistokhin, I.B., Pchelyakov, O.P., Tishkovsky, E.G., Obodnikov, V.I., Maksimov, V.V., Ivanov, A.A., Pinzhenin, E.I., Gramsch, E.

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