High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency by Krames, M. R., Ochiai-Holcomb, M., Höfler, G. E., Carter-Coman, C., Chen, E. I., Tan, I.-H., Grillot, P., Gardner, N. F., Chui, H. C., Huang, J.-W., Stockman, S. A., Kish, F. A., Craford, M. G., Tan, T. S., Kocot, C. P., Hueschen, M., Posselt, J., Loh, B., Sasser, G., Collins, D.

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Illumination with solid state lighting technology by Steigerwald, D.A., Bhat, J.C., Collins, D., Fletcher, R.M., Holcomb, M.O., Ludowise, M.J., Martin, P.S., Rudaz, S.L.

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