Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions by Kim, Matthew, Forbes, J. J., Hirsch, Emily A., Schrock, James, Lacouture, Shelby, Bilbao, Argenis, Bayne, Stephen B., O'Brien, Heather K., Ogunniyi, Aderinto A.

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An open circuit voltage decay system for performing injection dependent lifetime spectroscopy by Lacouture, Shelby, Schrock, James, Hirsch, Emily, Bayne, Stephen, O’Brien, Heather, Ogunniyi, Aderinto A.

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Electrothermal Simulation-Based Comparison of 4H-SiC p-i-n, Schottky, and JBS Diodes Under High Current Density Pulsed Operation by Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.

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Turn-ON of High-Voltage SiC Thyristors for Fast-Switching Applications by O'Brien, Heather K., Ogunniyi, Aderinto A., Shaheen, William, Sei-Hyung Ryu

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Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching by Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.

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An evaluation system for experimental silicon and silicon carbide super gate turn off thyristors by Bayne, Stephen, Lacouture, Shelby, Lawson, Kevin, Giesselmann, Michael, Scozzie, Charles J, O'Brien, Heather, Ogunniyi, Aderinto A

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Automated modular high energy evaluation system for experimental thyristor devices by Lacouture, Shelby, Lawson, Kevin, Bayne, Stephen, Giesselmann, Michael, Scozzie, Charles J, O'Brien, Heather, Ogunniyi, Aderinto A

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Sub-Millisecond Transient Analysis of High Voltage SiC MOSFET and High Voltage SiC IGBT by Ogunniyi, Aderinto A., O'Brien, Heather, Hinojosa, Miguel

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Thermal analysis of 4H-SiC DMOSFET structure under resistive switching by Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.

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Physics based electro-thermal transient simulation of 4H-SiC JBS diode using Silvaco ATLAS by Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.

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Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions by Ogunniyi, Aderinto A., O'Brien, Heather K., Hinojosa, Miguel, Cheng, Lin, Scozzie, Charles J., Pushpakaran, Bejoy N., Lacouture, Shelby, Bayne, Stephen B.

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Electro thermal transient simulation of silicon carbide power MOSFET by Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.

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Evaluation and Characterization of 15-kV, 4H-SiC N-Channel MOSFET for Power Conversion Applications by Ogunniyi, Aderinto A., Hinojosa, Miguel, O'Brien, Heather K., Ryu, Sei-Hyung, VanBrunt, Edward

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Electro-thermal transient simulation of silicon carbide power MOSFET by Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.

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Wide injection range OCVD system for lifetime spectroscopy techniques by Lacouture, Shelby, Schrock, James, Hirsch, Emily, Bayne, Stephen, O'Brien, Heather, Ogunniyi, Aderinto A.

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Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet by Pushpakaran, Bejoy N, Bayne, Stephen B, Ogunniyi, Aderinto A

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Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements by Lelis, A.J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., Goldsman, N.

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Failure Modes of 15-kV SiC SGTO Thyristors During Repetitive Extreme Pulsed Overcurrent Conditions by Schrock, James A., Hirsch, Emily A., Lacouture, Shelby, Kelley, Mitchell D., Bilbao, Argenis V., Ray, William B., Bayne, Stephen B., Giesselmann, Michael, O'Brien, Heather, Ogunniyi, Aderinto

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Safe Operating Area and Long-Term Reliability of 9-kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors by Lawson, Kevin, Bayne, Stephen B., Lacouture, Shelby, Lin Cheng, O'Brien, Heather, Ogunniyi, Aderinto, Scozzie, Charles

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The benefits and current progress of SiC SGTOs for pulsed power applications by Ogunniyi, Aderinto, O’Brien, Heather, Lelis, Aivars, Scozzie, Charles, Shaheen, William, Agarwal, Anant, Zhang, Jon, Callanan, Robert, Temple, Victor

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