Characterization of Border Trap Density With the Multifrequency Charge Pumping Technique in Dual-Layer Gate Oxide by YOUNGHWAN SON, PARK, Sunyoung, KANG, Taewook, OH, Byoungchan, SHIN, Hyungcheol

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Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors by OH, Byoungchan, CHO, Heung-Jae, KIM, Heesang, SON, Younghwan, KANG, Taewook, PARK, Sunyoung, JANG, Seunghyun, LEE, Jong-Ho, SHIN, Hyungcheol

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Characterization of the Variable Retention Time in Dynamic Random Access Memory by KIM, Heesang, OH, Byoungchan, SON, Younghwan, KIM, Kyungdo, CHA, Seon-Yong, JEONG, Jae-Goan, HONG, Sung-Joo, SHIN, Hyungcheol

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Investigation of Gate Etch Damage at Metal/High- k Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current by Cho, Heung-Jae, Son, Younghwan, Oh, Byoungchan, Jang, Seunghyun, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol

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Study of Trap Models Related to the Variable Retention Time Phenomenon in DRAM by KIM, Heesang, OH, Byoungchan, SON, Younghwan, KIM, Kyungdo, CHA, Seon-Yong, JEONG, Jae-Goan, HONG, Sung-Joo, SHIN, Hyungcheol

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Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation Mode by CHO, Heung-Jae, SON, Younghwan, OH, Byoungchan, LEE, Sanghoon, LEE, Jong-Ho, PARK, Byung-Gook, SHIN, Hyungcheol

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f Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor by Hee-Sauk Jhon, Jae-Hong Lee, Jaeho Lee, Byoungchan Oh, Ickhyun Song, Yeonam Yun, Byung-Gook Park, Jong-Duk Lee, Hyungcheol Shin

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Rethinking DRAM's Page Mode With STT-MRAM by Oh, Byoungchan, Abeyratne, Nilmini, Kim, Nam Sung, Ahn, Jeongseob, Dreslinski, Ronald G., Mudge, Trevor

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Random Telegraph Signal-Like Fluctuation Created by Fowler--Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor by Kim, Heesang, Oh, Byoungchan, Kim, Kyungdo, Cha, Seon-Yong, Jeong, Jae-Goan, Hong, Sung-Joo, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol

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Investigation of Gate Etch Damage at Metal/High-[Formula Omitted] Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current by Cho, Heung-Jae, Son, Younghwan, Oh, Byoungchan, Jang, Seunghyun, Lee, Jong-Ho, Park, Byung-Gook, Shin, Hyungcheol

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fmax Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor by JHON, Hee-Sauk, LEE, Jae-Hong, LEE, Jaeho, OH, Byoungchan, SONG, Ickhyun, YEONAM YUN, PARK, Byung-Gook, LEE, Jong-Duk, SHIN, Hyungcheol

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Approximations to field-effect factor and their use in GIDL modeling by Kozhukhov, Nikita, Byoungchan Oh, Hyungcheol Shin

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Characterization of oxide traps by RTN measurement in MOSFETs and memory devices by Shin, H, Byoungchan Oh

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[Formula Omitted] Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor by Jhon, Hee-Sauk, Lee, Jae-Hong, Lee, Jaeho, Oh, Byoungchan, Song, Ickhyun, Yun, Yeonam, Park, Byung-Gook, Lee, Jong-Duk, Shin, Hyungcheol

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Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches by Ramadout, B., Guo-Neng Lu, Carrere, J.-P., Pinzelli, L., Perrot, C., Rivoire, M., Nemouchi, F.

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f max Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor by Jhon, Hee-Sauk, Lee, Jae-Hong, Lee, Jaeho, Oh, Byoungchan, Song, Ickhyun, Yun, Yeonam, Park, Byung-Gook, Lee, Jong-Duk, Shin, Hyungcheol

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Observation of three-level random telegraph noise in GIDL current of Saddle-Fin type DRAM cell transistor by Byoungchan Oh, Heung-Jae Cho, Heesang Kim, Hyungcheol Shin

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NR-V2V's Cross-Group Based Emergency Message Transmission System by Yoo, Seonjong, Kim, Byoungchan, Oh, Seungmin, Kim, Youngboo

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Scalarane Sesterterpenes from a Marine Sponge of the Genus Spongia and Their FXR Antagonistic Activity by Nam, Sang-Jip, Ko, Hyunsil, Ju, Moon Kyeong, Hwang, Hoosang, Chin, Jungwook, Ham, Jungyeob, Lee, Byoungchan, Lee, Jaehwan, Won, Dong Hwan, Choi, Hyukjae, Ko, Jaeyoung, Shin, Kyoungjin, Oh, Taekyung, Kim, Seokho, Rho, Jung-Rae, Kang, Heonjoong

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