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Search Results - Olac-vaw, R.
Search Results - Olac-vaw, R.
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Addressable photocharging of single quantum dots assisted with atomic force microscopy probe
by
Dokukin, M.
,
Olac-Vaw, R.
,
Guz, N.
,
Mitin, V.
,
Sokolov, I.
Published in
Applied physics letters
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Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms
by
Prasad, C.
,
Park, K. W.
,
Chahal, M.
,
Meric, I.
,
Novak, S. R.
,
Ramey, S.
,
Bai, P.
,
Chang, H.-Y
,
Dias, N. L.
,
Hafez, W. M.
,
Jan, C.-H
,
Nidhi, N.
,
Olac-vaw, R. W.
,
Ramaswamy, R.
,
Tsai, C.
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Conference Proceeding
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A 14 nm SoC platform technology featuring 2 super(nd) generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um super(2) SRAM cells, optimized for low pow...
by
Jan, C-H
,
Al-amoody, F
,
Chang, H-Y
,
Chang, T
,
Chen, Y-W
,
Dias, N
,
Hafez, W
,
Ingerly, D
,
Jang, M
,
Karl, E
,
Shi, SK-Y
,
Komeyli, K
,
Kilambi, H
,
Kumar, A
,
Byon, K
,
Lee, C-G
,
Lee, J
,
Leo, T
,
Liu, P-C
,
Nidhi, N
,
Olac-vaw, R
,
Petersburg, C
,
Phoa, K
,
Prasad, C
,
Quincy, C
,
Ramaswamy, R
,
Rana, T
,
Rockford, L
,
Subramaniam, A
,
Tsai, C
,
Vandervoorn, P
,
Yang, L
,
Zainuddin, A
,
Bai, P
Published in
Digest of technical papers - Symposium on VLSI Technology
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A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for low power, high perform...
by
Jan, C.-H
,
Al-amoody, F.
,
Chang, H.-Y
,
Chang, T.
,
Chen, Y.-W
,
Dias, N.
,
Hafez, W.
,
Ingerly, D.
,
Jang, M.
,
Karl, E.
,
Shi, S. K.-Y
,
Komeyli, K.
,
Kilambi, H.
,
Kumar, A.
,
Byon, K.
,
Lee, C.-G
,
Lee, J.
,
Leo, T.
,
Liu, P.-C
,
Nidhi, N.
,
Olac-vaw, R.
,
Petersburg, C.
,
Phoa, K.
,
Prasad, C.
,
Quincy, C.
,
Ramaswamy, R.
,
Rana, T.
,
Rockford, L.
,
Subramaniam, A.
,
Tsai, C.
,
Vandervoorn, P.
,
Yang, L.
,
Zainuddin, A.
,
Bai, P.
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Optoelectronic application of multi-layer epitaxial graphene on a Si substrate
by
Olac-vaw, R.
,
Kang, H.C.
,
Komori, T.
,
Watanabe, T.
,
Karasawa, H.
,
Miyamoto, Y.
,
Handa, H.
,
Fukidome, H.
,
Suemitsu, T.
,
Suemitsu, M.
,
Mitin, V.
,
Otsuji, T.
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Hot electron microbolometers based on GaN heterostructures for THz applications
by
Ramaswamy, R.
,
Wang, K.
,
Muraviev, A.
,
Gaska, R.
,
Yang, J.
,
Sergeev, A.
,
Olac-Vaw, R.
,
Mitin, V.
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A 14 nm SoC platform technology featuring 2 super(nd) generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um super(2) SRAM cells, optimized for low pow...
by
Jan, C-H
,
Al-amoody, F
,
Chang, H-Y
,
Chang, T
,
Chen, Y-W
,
Dias, N
,
Hafez, W
,
Ingerly, D
,
Jang, M
,
Karl, E
,
Shi, SK-Y
,
Komeyli, K
,
Kilambi, H
,
Kumar, A
,
Byon, K
,
Lee, C-G
,
Lee, J
,
Leo, T
,
Liu, P-C
,
Nidhi, N
,
Olac-vaw, R
,
Petersburg, C
,
Phoa, K
,
Prasad, C
,
Quincy, C
,
Ramaswamy, R
,
Rana, T
,
Rockford, L
,
Subramaniam, A
,
Tsai, C
,
Vandervoorn, P
,
Yang, L
,
Zainuddin, A
,
Bai, P
Published in
2015 Symposium on VLSI Circuits (VLSI Circuits)
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Article
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A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for low power, high perform...
by
Jan, C.-H
,
Al-amoody, F.
,
Chang, H.-Y
,
Chang, T.
,
Chen, Y.-W
,
Dias, N.
,
Hafez, W.
,
Ingerly, D.
,
Jang, M.
,
Karl, E.
,
Shi, S. K.-Y
,
Komeyli, K.
,
Kilambi, H.
,
Kumar, A.
,
Byon, K.
,
Lee, C.-G
,
Lee, J.
,
Leo, T.
,
Liu, P.-C
,
Nidhi, N.
,
Olac-vaw, R.
,
Petersburg, C.
,
Phoa, K.
,
Prasad, C.
,
Quincy, C.
,
Ramaswamy, R.
,
Rana, T.
,
Rockford, L.
,
Subramaniam, A.
,
Tsai, C.
,
Vandervoorn, P.
,
Yang, L.
,
Zainuddin, A.
,
Bai, P.
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Conference Proceeding
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