Direct Modulation of Phospholipase D Activity by Gβγ by Preininger, A.M., Henage, L.G., Oldham, W.M., Yoon, E.J., Hamm, H.E., Brown, H.A.

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Antagonistic Human FcγRIIB (CD32B) Antibodies Have Anti-Tumor Activity and Overcome Resistance to Antibody Therapy In Vivo by Roghanian, Ali, Teige, Ingrid, Mårtensson, Linda, Cox, Kerry L., Kovacek, Mathilda, Ljungars, Anne, Mattson, Jenny, Sundberg, Annika, Vaughan, Andrew T., Shah, Vallari, Smyth, Neil R., Sheth, Bhavwanti, Chan, H.T. Claude, Li, Zhan-Chun, Williams, Emily L., Manfredi, Giusi, Oldham, Robert J., Mockridge, C. Ian, James, Sonya A., Dahal, Lekh N., Hussain, Khiyam, Nilsson, Björn, Verbeek, J. Sjef, Juliusson, Gunnar, Hansson, Markus, Jerkeman, Mats, Johnson, Peter W.M., Davies, Andrew, Beers, Stephen A., Glennie, Martin J., Frendéus, Björn, Cragg, Mark S.

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Electronic structure theory and mechanisms of the oxide trapped hole annealing process by Karna, S.P., Pineda, A.C., Pugh, R.D., Shedd, W.M., Oldham, T.R.

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Response of interface traps during high-temperature anneals (MOSFETs) by Lelis, A.J., Oldham, T.R., DeLancey, W.M.

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Radiation evaluation of commercial ferroelectric nonvolatile memories by Benedetto, J.M., De Lancey, W.M., Oldham, T.R., McGarrity, J.M., Tipton, C.W., Brassington, M., Fisch, D.E.

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Comparison of low-pressure and plasma-enhanced chemical vapor deposited tungsten thin films by GREENE, W. M, OLDHAM, W. G, HESS, D. W

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Plasma- and gas-surface interactions during the chemical vapor deposition of tungsten from H2/WF6 by Green, W. M., Hess, D. W., Oldham, W. G.

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