Search Results - Oleksenko, P.F

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  1. 1
    Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation

    Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation by Vlasenko, N. A., Oleksenko, P. F., Mukhlyo, M. A., Veligura, L. I.

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  2. 2
    Effect of erbium fluoride doping on the photoluminescence of Si[O.sub.x] films

    Effect of erbium fluoride doping on the photoluminescence of Si[O.sub.x] films by Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Strelchuk, V.V, Oleksenko, P.F, Veligura, L.I, Nikolenko, A.S, Mukhlyo, M.A

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  3. 3
    Specific features and nature of the 890 nm photoluminescence band detected in Si[O.sub.x] films after low-temperature annealing

    Specific features and nature of the 890 nm photoluminescence band detected in Si[O.sub.x] films after low-temperature annealing by Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Manoilov, E.G, Oleksenko, P.F, Veligura, L.I, Mukhlyo, M.A

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  4. 4
    Erratum: "electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films" [semiconductors 45, 587 ]

    Erratum: "electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films" [semiconductors 45, 587 ] by Vlasenko, N.A, Oleksenko, P.F, Denisova, Z.L, Sopinskii, N.V, Veligura, L.I, Gule, E.G, Litvin, O.S, Mukhlyo, M.A

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  5. 5
    Electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films

    Electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films by Vlasenko, N.A, Oleksenko, P.F, Denisova, Z.L, Sopinskii, N.V, Veligura, L.I, Gule, E.G, Litvin, O.S, Mukhlyo, M.A

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  6. 6
    Effect of Auger recombination on thermal processes in InGaAs and InAsSbP IR-emitting diodes

    Effect of Auger recombination on thermal processes in InGaAs and InAsSbP IR-emitting diodes by Sukach, G.A., Bogoslovskaya, A.B., Oleksenko, P.F., Bilynets, Yu.Yu, Kabacij, V.N.

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  7. 7
    Low-temperature photo-hydro-modification of II–VI and III–V semiconductors

    Low-temperature photo-hydro-modification of II–VI and III–V semiconductors by Kamuz, A.M., Oleksenko, P.F., Ovsyannikov, E.Yu, Sizov, F.F., Dyachenko, T.A.

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