Tradeoff Between Mobility and Subthreshold Characteristics in Dual-Channel Heterostrucure n- and p-MOSFETs by Jung, J., Chleirigh, C.N., Yu, S., Olubuyide, O.O., Hoyt, J., Antoniadis, D.A.

Get full text

Tradeoff between mobility and subthreshold characteristics in dual-channel heterostructure n- and p-MOSFETs by Jongwan Jung, Chleirigh, C.N., Shaofeng Yu, Olubuyide, O.O., Hoyt, J., Antoniadis, D.A.

Get full text

Mobility and sub-threshold characteristics in high-mobility dual-channel strained Si/strainef SiGe p-MOSFETs by Ni Chleirigh, C., Olubuyide, O.O., Hoyt, J.L.

Request full text

Spatial Characterization of Germanium-on-Silicon C-Band PIN Photodiodes by Orcutt, J.S., Olubuyide, O.O., Hoyt, J.L., Ram, R.J.

Request full text

High electron and hole mobility enhancements in thin-body strained Si/strained SiGe/strained Si heterostructures on insulator by Aberg, I., Ni Chleirigh, C., Olubuyide, O.O., Duan, X., Hoyt, J.L.

Request full text

Characterization and Performance Analysis of LPCVD Germanium-on-Silicon C-Band Photodiodes by Orcutt, J.S., Olubuyide, O.O., DiLello, N., Hoyt, J.L., Ram, R.J.

Request full text

Fabrication of strained Si/strained SiGe/strained Si heterostructures on insulator by a bond and etch-back technique by Aberg, I., Olubuyide, O.O., Li, J., Hull, R., Hoyt, J.L.

Request full text

Silicon Electronic Photonic Integrated Circuits for High Speed Analog to Digital Conversion by Kartner, F.X., Orcutt, J.S., Park, M., Perrott, M., Popovic, M.A., Rakich, P.T., Ram, R.J., Smith, H.I., Geis, M., Grein, M., Lyszczarz, T., Amataya, R., Spector, S., Yoon, J.U., Barbastathis, G., Byun, H., Gan, F., Holzwarth, C.W., Hoyt, J.L., Ippen, E.P., Olubuyide, O.O.

Request full text