Investigation of f T -Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs by Sarker, Md Arifur R., Omprakash, Anup P., Cho, Moon-Kyu, Cressler, John D., Song, Ickhyun

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A 0.8 THz fMAX SiGe HBT Operating at 4.3 K by CHAKRABORTY, Partha S, CARDOSO, Adilson S, WIER, Brian R, OMPRAKASH, Anup P, CRESSLER, John D, KAYNAK, Mehmet, TILLACK, Bernd

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Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI by Ildefonso, Adrian, Warner, Jeffrey H., Cressler, John D., Tzintzarov, George N., Nergui, Delgermaa, Omprakash, Anup P., Goley, Patrick S., Hales, Joel M., Khachatrian, Ani, Buchner, Stephen P., McMorrow, Dale

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Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures by Ying, Hanbin, Dark, Jason, Omprakash, Anup P., Wier, Brian R., Ge, Luwei, Raghunathan, Uppili, Lourenco, Nelson E., Fleetwood, Zachary E., Mourigal, Martin, Davidovic, Dragomir, Cressler, John D.

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Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam by Nergui, Delgermaa, Ildefonso, Adrian, Tzintzarov, George N., Lourenco, Nelson E., Omprakash, Anup P., Goley, Patrick S., Fleetwood, Zachary E., LaLumondiere, Stephen D., Bonsall, Jeremy P., Monahan, Daniele M., Kettering, Hunter, Brewe, Dale L., Cressler, John D.

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An Investigation of High-Temperature (to 300 °C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology by Omprakash, Anup P., Ha Dao, Raghunathan, Uppili S., Hanbin Ying, Chakraborty, Partha S., Babcock, Jeffrey A., Mukhopadhyay, Rajarshi, Cressler, John D.

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Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs by Raghunathan, Uppili S., Hanbin Ying, Wier, Brian R., Omprakash, Anup P., Chakraborty, Partha S., Bantu, Tikurete G., Yasuda, Hiroshi, Menz, Philip, Cressler, John D.

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The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology by Omprakash, Anup P., Ildefonso, Adrian, Fleetwood, Zachary E., Tzintzarov, George N., Cardoso, Adilson S., Babcock, Jeffrey A., Mukhopadhyay, Rajarshi, Khachatrian, Ani, Warner, Jeffrey H., McMorrow, Dale, Buchner, Stephen P., Cressler, John D.

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Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology by Omprakash, Anup P., Fleetwood, Zachary E., Raghunathan, Uppili S., Ildefonso, Adrian, Cardoso, Adilson S., Lourenco, Nelson E., Babcock, Jeffrey, Mukhopadhyay, Rajarshi, En Xia Zhang, McMarr, Patrick J., Fleetwood, Daniel M., Cressler, John D.

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Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology by Cardoso, Adilson S., Chakraborty, Partha S., Karaulac, Nedeljko, Fleischhauer, David M., Lourenco, Nelson E., Fleetwood, Zachary E., Omprakash, Anup P., England, Troy D., Jung, Seungwoo, Najafizadeh, Laleh, Roche, Nicolas J.-H, Khachatrian, Ani, Warner, Jeffrey H., McMorrow, Dale, Buchner, Stephen P., En Xia Zhang, Cher Xuan Zhang, McCurdy, Michael W., Reed, Robert A., Fleetwood, Daniel M., Paki-Amouzou, Pauline, Cressler, John D.

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A 0.8 THz f SiGe HBT Operating at 4.3 K by Chakraborty, Partha S., Cardoso, Adilson S., Wier, Brian R., Omprakash, Anup P., Cressler, John D., Kaynak, Mehmet, Tillack, Bernd

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Operation of SiGe HBTs Down to 70 mK by Hanbin Ying, Wier, Brian R., Dark, Jason, Lourenco, Nelson E., Luwei Ge, Omprakash, Anup P., Mourigal, Martin, Davidovic, Dragomir, Cressler, John D.

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Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs by Raghunathan, Uppili S., Martinez, Rafael Perez, Wier, Brian R., Omprakash, Anup P., Ying, Hanbin, Bantu, Tikurete G., Yasuda, Hiroshi, Menz, Philipp, Cressler, John D.

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On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology by Cardoso, Adilson S., Omprakash, Anup P., Chakraborty, Partha Sarathi, Karaulac, Nedeljko, Fleischhauer, David M., Ildefonso, Adrian, Zeinolabedinzadeh, Saeed, Oakley, Michael A., Bantu, Tikurete G., Lourenco, Nelson E., Cressler, John D.

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A 0.8 THz [Formula Omitted] SiGe HBT Operating at 4.3 K by Chakraborty, Partha S, Cardoso, Adilson S, Wier, Brian R, Omprakash, Anup P, Cressler, John D, Kaynak, Mehmet, Tillack, Bernd

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Predicting hard failures and maximum usable range of sige HBTs by Perez Martinez, Rafael, Raghunathan, Uppili S., Wier, Brian R., Omprakash, Anup P., Oakley, Michael A., Fleetwood, Zachary E., Cressler, John D.

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Modeling of high-current damage in SiGe HBTs under pulsed stress by Raghunathan, Uppili S., Wier, Brian, Perez Martinez, Rafael, Fleetwood, Zachary E., Omprakash, Anup, Hanbin Ying, Zeinolabedinzadeh, Saeed, Cressler, John D.

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Investigation of fT-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs by Sarker, Md Arifur R., Omprakash, Anup P., Cho, Moon-Kyu, Cressler, John D., Song, Ickhyun

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On the cryogenic performance of ultra-low-loss, wideband SPDT RF switches designed in a 180 nm SOI-CMOS technology by Cardoso, Adilson S., Chakraborty, Partha S., Omprakash, Anup P., Karaulac, Nedeljko, Saha, Prabir, Cressler, John D.

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Strategies to Overcome Antileishmanial Drugs Unresponsiveness by Sundar, Shyam, Singh, Om Prakash, Singh, Anup

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