Band-Edge Energies and Photoelectrochemical Properties of n-Type AlxGa1-xN and InyGa1-yN Alloys by Ono, Katsushi Masato, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Ohkawa, Kazuhiro

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Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN by Fujii, Katsushi, Ono, Masato, Iwaki, Yasuhiro, Sato, Keiichi, Ohkawa, Kazuhiro, Yao, Takafumi

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Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN by Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro

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Effect of Early vs Delayed Surgical Treatment on Motor Recovery in Incomplete Cervical Spinal Cord Injury With Preexisting Cervical Stenosis: A Randomized Clinical Trial by Chikuda, Hirotaka, Koyama, Yurie, Matsubayashi, Yoshitaka, Ogata, Toru, Ohtsu, Hiroshi, Sugita, Shurei, Sumitani, Masahiko, Kadono, Yuho, Miura, Toshiki, Tanaka, Sakae, Akiyama, Toru, Ando, Kei, Anno, Masato, Azuma, Seiichi, Endo, Kenji, Endo, Toru, Fujiyoshi, Takayuki, Furuya, Takeo, Hayashi, Hiroyuki, Higashikawa, Akiro, Hiyama, Akihiko, Horii, Chiaki, Iimoto, Seiji, Iizuka, Yoichi, Ikuma, Hisanori, Imagama, Shiro, Inokuchi, Koichi, Inoue, Hirokazu, Inoue, Tomoo, Ishii, Keisuke, Ishii, Masayoshi, Ito, Takui, Itoi, Akira, Iwamoto, Kohei, Iwasaki, Motoki, Kaito, Takashi, Kato, Tsuyoshi, Katoh, Hiroyuki, Kawaguchi, Yoshiharu, Kawano, Osamu, Kimura, Atsushi, Kobayashi, Kazuyoshi, Koda, Masao, Komatsu, Miki, Kumagai, Gentaro, Maeda, Takeshi, Makino, Takahiro, Mannoji, Chikato, Masuda, Kazuhiro, Masuda, Keisuke, Matsumoto, Koji, Matsumoto, Morio, Matsunaga, Shunji, Matsuyama, Yukihiro, Mieda, Tokue, Miyoshi, Kota, Mochida, Joji, Moridaira, Hiroshi, Motegi, Hiroyuki, Nakagawa, Yukihiro, Nohara, Yutaka, Oae, Kazunori, Ogawa, Shinji, Okazaki, Rentaro, Okuda, Akinori, Onishi, Eijiro, Ono, Atsushi, Oshima, Masashi, Oshita, Yusuke, Saita, Kazuo, Sasao, Yutaka, Sato, Kimiaki, Sawakami, Kimihiko, Seichi, Atsushi, Seki, Shoji, Shigematsu, Hideki, Suda, Kota, Takagi, Yasutaka, Takahashi, Masahito, Takahashi, Ryosuke, Takasawa, Eiji, Takenaka, Shota, Takeshita, Katsushi, Takeshita, Yujiro, Tokioka, Takamitsu, Tokuhashi, Yasuaki, Tonosu, Juichi, Uei, Hiroshi, Wada, Kanichiro, Watanabe, Masahiko, Yahata, Tadashi, Yamada, Kei, Yasuda, Taketoshi, Yasui, Keigo, Yoshii, Toshitaka

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Suppressed pediatric asthma hospitalizations during the COVID‐19 pandemic in Japan, from a national survey by Korematsu, Seigo, Fujisawa, Takao, Saito, Naruo, Tezuka, Junichiro, Miura, Katsushi, Kobayashi, Ichiro, Miyata, Ippei, Kosugi, Yujiro, Gohda, Yuji, Koike, Yumi, Suda, Ami, Matsuo, Akiko, Sasaki, Michiyo, Handa, Yousuke, Fujiwara, Michimasa, Ono, Atsushi, Koizumi, Shinya, Oishi, Taku, Tanaka, Takayuki, Ando, Yusuke, Taba, Naohiko, Tsurinaga, Yuki, Sato, Takeshi, Kanai, Rei, Yashiro, Masato, Takagi, Toshiyuki, Hida, Shinya, Harazaki, Masashi, Hoshina, Takayuki, Okada, Seigo, Yasutomi, Motoko, Nakata, Setsuko, Muto, Ayako, Tanabe, Saori, Ueda, Yutaka, Hasegawa, Shunji, Kameda, Makoto, Tanaka‐Taya, Keiko, Fujimoto, Tsuguto, Okada, Kenji

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Band-Edge Energies and Photoelectrochemical Properties of n-Type Al[sub x]Ga[sub 1−x]N and In[sub y]Ga[sub 1−y]N Alloys by Fujii, Katsushi, Ono, Masato, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Ohkawa, Kazuhiro

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Photoelectrochemical reaction and H 2 generation at zero bias optimizedby carrier concentration of n -type GaN by Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro

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Photoelectrochemical H2 Gas Generation Improvement with Thin p-Type GaN Layer on n-Type GaN by Fujii, Katsushi, Ono, Masato, Iwaki, Yasuhiro, Yao, Takafumi, Ohkawa, Kazuhiro

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Photoelectrochemical reaction and H{sub 2} generation at zero bias optimized by carrier concentration of n-type GaN by Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro, Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Center for Interdisciplinary Research, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578, Japan and Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601, Japan and Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku, Tokyo 162-8601

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