Search Results - Oose, Naoyuki

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  1. 1
    Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication

    Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication by Fujiwara, Takanori, Tanigaki, Yugo, Furukawa, Yukihiro, Tonari, Kazuhiro, Otsuki, Akihiro, Imai, Tomohiro, Oose, Naoyuki, Utsumi, Makoto, Ryo, Mina, Gotoh, Masahide, Nakamata, Shinichi, Sakai, Takao, Sakai, Yoshiyuki, Miyajima, Masaaki, Kumura, Hiroshi, Fukuda, Kenji, Okumura, Hajime

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  2. 2
    Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

    Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT by Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu

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  3. 3
    Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

    Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT by Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Tanaka, Atsushi, Ogata, Syuji, Nakayama, Koji, Hayashi, Toshihiko, Asano, Katsunori, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu

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  4. 4
    Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

    Low V sub(f) and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT by Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu

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