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Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal--Organic Vapor Phase Epitaxy
by
Ooyama, Kimihito
,
Sugawara, Katsuya
,
Okuzaki, Shinya
,
Taketomi, Hiroyuki
,
Miyake, Hideto
,
Hiramatsu, Kazumasa
,
Hashizume, Tamotsu
Published in
Jpn J Appl Phys
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Deep Electronic Levels of Al x Ga 1-x N with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
by
Ooyama, Kimihito
,
Sugawara, Katsuya
,
Okuzaki, Shinya
,
Taketomi, Hiroyuki
,
Miyake, Hideto
,
Hiramatsu, Kazumasa
,
Hashizume, Tamotsu
Published in
Japanese Journal of Applied Physics
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Temperature-Dependent Interface-State Response in an Al 2 O 3 /n-GaN Structure
by
Ooyama, Kimihito
,
Kato, Hiroki
,
Miczek, Marcin
,
Hashizume, Tamotsu
Published in
Japanese Journal of Applied Physics
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Japanese Journal Of Applied Physics
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Jpn J Appl Phys
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Institute Of Physics Iopscience Extra
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