Search Results - Oritsuki, Y

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  1. 1
    Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

    Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices by Tanaka, A, Oritsuki, Y, Kikuchihara, H, Miyake, M, Mattausch, H J, Miura-Mattausch, Mitiko, Liu, Y, Green, K

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  2. 2
    Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction

    Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction by Tanaka, A, Oritsuki, Y, Kikuchihara, H, Miyake, M, Mattausch, H J, Miura-Mattausch, M, Liu, Y, Green, K

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  3. 3
    HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

    HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits by Oritsuki, Y, Yokomichi, M, Kajiwara, T, Tanaka, A, Sadachika, N, Miyake, M, Kikuchihara, H, Johguchi, K, Feldmann, U, Mattausch, H J, Miura-Mattausch, M

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  4. 4
    HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits

    HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits by Mattausch, H.J., Kajiwara, T., Yokomichi, M., Sakuda, T., Oritsuki, Y., Miyake, M., Sadachika, N., Kikuchihara, H., Feldmann, U., Miura-Mattausch, M.

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  5. 5
    Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices

    Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices by Sakuda, T., Sadachika, N., Oritsuki, Y., Yokomichi, M., Miyake, M., Kajiwara, T., Kikuchihara, H., Feldmann, U., Mattausch, H.J., Miura-Mattausch, M.

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  6. 6
    Threshold voltage shift of amorphous silicon thin-film transistors during pulse operation

    Threshold voltage shift of amorphous silicon thin-film transistors during pulse operation by ORITSUKI, R, HORII, T, SASANO, A, TSUTSUI, K, KOIZUMI, T, KANEKO, Y, TSUKADA, T

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