Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate by Bokhan, P.A., Fateev, N.V., Malin, T.V., Osinnykh, I.V., Zakrevsky, Dm.E., Zhuravlev, K.S.

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Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity by Bokhan, P.A., Fateev, N.V., Malin, T.V., Osinnykh, I.V., Zakrevsky, D.E., Zhuravlev, K.S.

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Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity by Bokhan, P.A., Fateev, N.V., Malin, T.V., Osinnykh, I.V., Zakrevsky, Dm.E., Zhuravlev, K.S.

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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in [Al.sub.x][Ga.sub.1-x]N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy by Ratnikov, V.V, Sheglov, M.P, Ber, B. Ya, Kazantsev, D. Yu, Osinnykh, I.V, Malin, T.V, Zhuravlev, K.S

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Amplified luminescence of heavily doped AlxGa1 - xN structures under optical pumping by Bokhan, P.A., Zhuravlev, K.S., Zakrevskii, D.E., Malin, T.V., Osinnykh, I.V., Fateev, N.V.

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Decrease in the binding energy of donors in heavily doped GaN:Si layers by Osinnykh, I. V., Zhuravlev, K. S., Malin, T. V., Ber, B. Ya, Kazantsev, D. Yu

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