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Search Results - Ossorio, O.G.
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Controlling the intermediate conductance states in RRAM devices for synaptic applications
by
García, H.
,
Ossorio, O.G.
,
Dueñas, S.
,
Castán, H.
Published in
Microelectronic engineering
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Dynamics of set and reset processes on resistive switching memories
by
Dueñas, S.
,
Castán, H.
,
Ossorio, O.G.
,
García, H.
Published in
Microelectronic engineering
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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
by
Vinuesa, G.
,
Ossorio, O.G.
,
García, H.
,
Sahelices, B.
,
Castán, H.
,
Dueñas, S.
,
Kull, M.
,
Tarre, A.
,
Jogiaas, T.
,
Tamm, A.
,
Kasikov, A.
,
Kukli, K.
Published in
Solid-state electronics
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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
by
Ossorio, Ó.G.
,
Vinuesa, G.
,
García, H.
,
Sahelices, B.
,
Dueñas, S.
,
Castán, H.
,
Ritala, M.
,
Leskelaˇ, M.
,
Kemell, M.
,
Kukli, K.
Published in
Solid-state electronics
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