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Search Results - Ostermeir, R.
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Temperature distribution in Si-MOSFETs studied by micro-Raman spectroscopy
by
Ostermeir, R.
,
Brunner, K.
,
Abstreiter, G.
,
Weber, W.
Published in
IEEE transactions on electron devices
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Wet rapid thermal oxidation of silicon with a pyrogenic system
by
Lerch, W.
,
Roters, G.
,
Münzinger, P.
,
Mader, R.
,
Ostermeir, R.
Published in
Materials science & engineering. B, Solid-state materials for advanced technology
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Hot carrier light emission from GaAs HEMT devices
by
Ostermeir, R
,
Koch, F
,
Brugger, H
,
Narozny, P
,
Dambkes, H
Published in
Semiconductor science and technology
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Band-structure effects in the hot-carrier emission spectrum of GaAs FET devices
by
Ostermeir, R
,
Koch, F
,
Brugger, H
,
Narozny, P
,
Dambkes, H
Published in
Semiconductor science and technology
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The spectral distribution of light emission from hot carriers in GaAs PIN diodes-experiments and Monte Carlo analysis
by
Ostermeir, R
,
Lugli, P
,
Liebig, D
,
Koch, F
,
Vogal, P
,
Pobl, M
,
Harth, W
Published in
Semiconductor science and technology
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Local temperature distribution in Si-MOSFETs studied by micro-raman spectroscopy
by
Ostermeir, R.
,
Brunner, K.
,
Abstreiter, G.
,
Weber, W.
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The influence of "off-axis" from [100] oriented Si wafers on junction depth and sheet resistance for low-energy implantation and rapid thermal annealing
by
Lerch, W.
,
Downey, D.F.
,
Arevalo, E.A.
,
Ostermeir, R.
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The significance of controlling "off-axis" (from 1-0-0) oriented Si wafers during high angle implants
by
Downey, D.F.
,
Arevalo, E.A.
,
Eddy, R.J.
,
Lerch, W.
,
Loeffelmacher, D.
,
Ostermeir, R.
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