An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices by Brady, R.G., Oxley, C.H., Brazil, T.J.

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On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT by Oxley, C.H., Uren, M.J., Coates, A., Hayes, D.G.

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Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor by Oxley, C.H., Uren, M.J.

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Micro-Raman/Infrared Temperature Monitoring of Gunn Diodes by Hopper, R.H., Oxley, C.H., Pomeroy, J.W., Kuball, M.

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Extraction of second harmonic from an InP based planar Gunn diode using diamond resonator for milli-metric wave frequencies by Maricar, Mohamed Ismaeel, Khalid, Ata, Cumming, D.R.S., Oxley, C.H.

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Extraction of second harmonic from the In0.53Ga0.47As planar Gunn diode using radial stub resonators by Maricar, Mohamed Ismaeel, Khalid, A., Glover, J., Evans, G.A., Vasileious, P., Li, Chong, Cumming, D., Oxley, C.H.

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Improved infrared (IR) microscope measurements and theory for the micro-electronics industry by Oxley, C.H., Hopper, R.H., Hill, G., Evans, G.A.

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Gallium nitride: the promise of high RF power and low microwave noise performance in S and I band by Oxley, C.H.

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Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs by Oxley, C.H

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Measured thermal images of a gallium arsenide power MMIC with and without RF applied to the input by Oxley, C.H., Coaker, B.M., Priestley, N.E.

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Improved infrared (IR) microscope measurements for the micro-electronics industry by Oxley, C.H., Hopper, R.H., Evans, G.A.

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Planar gunn diode characterisation and resonators by Maricar, M.I, Glover, J, Evans, G.A, Khalid, A, Papageorgiou, V, Li Chong, Dunn, G, Stephen, A, Bajo, M, Kuball, M, Cumming, D.R.S, Oxley, C.H

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Thermal measurement of RF and microwave devices using a novel thermal probe by Hopper, R.H, Glover, J.J, Evans, G.A, Oxley, C.H

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Gallium arsenide traveling-wave field-effect transistors by Holden, A.J., Daniel, D.R., Davies, I., Oxley, C.H., Rees, H.D.

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Very short gate-length GaAs MESFET's by Patrick, W., Mackie, W.S., Beaumont, S.P., Wilkinson, C.D.W., Oxley, C.H.

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GaN H-FET development at QinetiQ by Martin, T., Uren, M.J., Balmer, R.S., Soley, D., Wallis, D.J., Hilton, K.P., Maclean, J.O., Munday, A.G., Hydes, A.J., Hayes, D.G., Oxley, C.H., McGovern, P., Tasker, P.J.

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Design and Performance of I-Band (8-10-GHz) TRAPATT Diodes and Amplifiers by Oxley, C.H., Howard, A.M., Purcell, J.J.

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Contributors, May 1979 by Abe, H., Allison, R., Asano, Y., Aono, Y., Aston, R., Azizi, A., Basawapatna, G.R., Behm, K., Benko, E., Bernick, R.L., Buscher, H.T., Cachier, G., Camisa, R.L., Chen, J.T.C., Chen, P.T., Curby, R., DiLorenzo, J.V., Elta, M.E., Espaignol, J., Fong, T.T., Gardiol, F.E., Garver, R.V., Gewartowski, J.W., Gupta, M.S., Haddad, G.I., Hayashi, R., Howard, A.M., Fwu-Jih Hsu, Itoh, T., Kawasaki, R., Kiehl, R.A., Kuno, H.J., Chiung-Tung Li, Mazumder, S.R., Midford, T.A., Mishima, K., Mizuno, H., Montress, G.K., Ohmori, M., Oxley, C.H., Pfund, G., Purcell, J.J., Russell, K.J., Schunemann, K.F., Sechi, F.N., Snapp, C.P., Stancliff, R.B., Stevance, J., Sun, C., Tajima, Y., Takada, T., Talwar, A.K., Tohyama, H., Tucker, R.S., Tully, J.W., Wang, P.H., Wisseman, W.R., Yamamoto, K.

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Extending thrombolysis to 4·5–9 h and wake-up stroke using perfusion imaging: a systematic review and meta-analysis of individual patient data by Campbell, Bruce C V, Leys, Didier, Molina, Carlos, Curtze, Sami, De Silva, Deidre A, Bladin, Christopher F, Pfaff, Johannes A R, Sharma, Gagan, Desmond, Patricia M, Toni, Danilo, Thijs, Vincent, Churilov, Leonid, Yan, Bernard, Mitchell, Peter J., Sharma, Gagan, Desmond, Patricia M., Oxley, Thomas, Rodrigues, Edrich, Williams, Cameron, Ng, Jo-Lyn, Tu, Hans T-H., McCoy, Rachael, Patel, S., Harvey, J., Cheong, E., Waters, Michael, Wijeratne, Tissa, Bladin, Christopher F., Loh, Poh Sien, Coote, Skye, Moore, A., Ross, Z., Miteff, Ferdinand, Ang, Timothy, Garcia-Esperon, Carlos, Krause, Martin, Day, Susan, Young, Dennis, Wong, Andrew A., Muller, Claire, Vallat, W., Bailey, Peter, Sabet, Arman, Mishra, Sachin, Tan, Meng, George, K., Tatlisumak, Turgut, Sibolt, G., Tiainen, M., Koivu, M., Eirola, S., Lin, C.M., Ho, S.C., Tsai, C.H., Lu, C.H., Kung, W.L., Jiang, S.K., Kuan, C.W., Tsai, H.T., Lu, C.J., Ysai, C.L., Jeng, J.S., Tang, S.C., Chung, T.C., Hu, C.J., Chan, L., Yeh, H.L., Peng, G.S., Cheng, C.A., Hsu, C.H., Sung, Y.F., Blacker, David, Chen, C-I., Cowley, Elise, Kolbe, John, Macdonnell, Richard, Attia, John, Cadilhac, Dominique, Anderson, Craig, Howells, David, Barber, A., Bendszus, Martin, Hacke, Werner, Ringleb, Peter, Toni, Danilo, Ehrenkrona, Christina, Cove, Lynda, Niederkorn, Kurt, Mikulik, Robert, Mas, Jean-Louis, Berrouschot, Jörg, Sobesky, Jan, Kessler, Christof, Poli, Sven, Althaus-Knaurer, Katharina, Rodriguez, Alain L., Muir, Keith, Fink, John N., McNeil, John, Williams, M.

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Stacking of cold antiprotons by Gabrielse, G, Bowden, N.S, Oxley, P, Speck, A, Storry, C.H, Tan, J.N, Wessels, M, Grzonka, D, Oelert, W, Schepers, G, Sefzick, T, Walz, J, Pittner, H, Hänsch, T.W, Hessels, E.A

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