Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells by Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., Altimime, L.

Get full text

Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics by Kerber, A., Cartier, E., Pantisano, L., Degraeve, R., Kauerauf, T., Kim, Y., Hou, A., Groeseneken, G., Maes, H.E., Schwalke, U.

Get full text

Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions by Houssa, M., Pantisano, L., Ragnarsson, L.-Å., Degraeve, R., Schram, T., Pourtois, G., De Gendt, S., Groeseneken, G., Heyns, M.M.

Get full text

Method to evaluate off-state breakdown in scaled Tri-gate technologies by Nminibapiel, D., Joshi, K., Ramamurthy, R., Pantisano, L., Meric, I., Ramey, S.

Request full text

A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies by Joshi, K., Nminibapiel, D., Ghoneim, M., Ali, D., Ramamurthy, R., Pantisano, L., Meric, I., Ramey, S.

Request full text

Low-frequency noise behavior of SiO2--HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness by Simoen, E, Mercha, A, Pantisano, L, Claeys, C, Young, E

Get full text

Estimation of fixed charge densities in hafnium-silicate gate dielectrics by Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.

Get full text

Reliability screening of high- k dielectrics based on voltage ramp stress by Kerber, A., Pantisano, L., Veloso, A., Groeseneken, G., Kerber, M.

Get full text

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks by Carter, R. J., Cartier, E., Kerber, A., Pantisano, L., Schram, T., De Gendt, S., Heyns, M.

Get full text

High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs by Rana, U., Brunco, D. P., Raman, S., Triyoso, D.H., Stoker, M.W., Johnson, J. B., Pantisano, L., Seo, K. D., Zhao, M., Reznicek, A., Krishnan, R., Moser, B., Freeman, J., Jang, L., Kaganer, E.

Request full text

A study of the leakage current in TiN/HfO2/TiN capacitors by Cimino, S., Padovani, A., Larcher, L., Afanas’ev, V.V., Hwang, H.J., Lee, Y.G., Jurczac, M., Wouters, D., Lee, B.H., Hwang, H., Pantisano, L.

Get full text

On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices by Westlinder, J., Schram, T., Pantisano, L., Cartier, E., Kerber, A., Lujan, G.S., Olsson, J., Groeseneken, G.

Get full text

A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs by Severi, S., Pantisano, L., Augendre, E., San Andres, E., Eyben, P., De Meyer, K.

Get full text

A Study of Relaxation Current in High- $kappa$ Dielectric Stacks by Xu, Zhen, Pantisano, L, Kerber, A, Degraeve, R, Cartier, E, De Gendt, S, Heyns, M, Groeseneken, G

Get full text

Understanding gate metal work function (mWF) impact on device reliability - A holistic approach by Srinivasan, P., Ranjan, R., Cimino, S., Zainuddin, A., Kannan, B., Pantisano, L., Mahmud, I., Dilliway, G., Nigam, T.

Request full text

Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks by Zhang, J.F., Mo Huai Chang, Zhigang Ji, Lin Lin, Ferain, I., Groeseneken, G., Pantisano, L., De Gendt, S., Heyns, M.M.

Get full text

Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100) by Trojman, L., Pantisano, L., Ferain, I., Severi, S., Maes, H.E., Groeseneken, G.

Get full text

Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter? by Trojman, L., Pantisano, L., Dehan, M., Ferain, I., Severi, S., Maes, H.E., Groeseneken, G.

Get full text

Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode by Chen, Y.Y., Goux, L., Pantisano, L., Swerts, J., Adelmann, C., Mertens, S., Afanasiev, V.V., Wang, X.P., Govoreanu, B., Degraeve, R., Kubicek, S., Paraschiv, V., Verbrugge, B., Jossart, N., Altimime, L., Jurczak, M., Kittl, J., Groeseneken, G., Wouters, D.J.

Get full text

Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients by Pantisano, L., Schram, T., Li, Z., Lisoni, J. G., Pourtois, G., De Gendt, S., Brunco, D. P., Akheyar, A., Afanas’ev, V. V., Shamuilia, S., Stesmans, A.

Get full text