Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities by Chen, Lipin, Skibitzki, Oliver, Pedesseau, Laurent, Létoublon, Antoine, Stervinou, Julie, Bernard, Rozenn, Levallois, Christophe, Piron, Rozenn, Perrin, Mathieu, Schubert, Markus Andreas, Moréac, Alain, Durand, Olivier, Schroeder, Thomas, Bertru, Nicolas, Even, Jacky, Léger, Yoan, Cornet, Charles

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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells by Chen, Lipin, Alqahtani, Mahdi, Levallois, Christophe, Létoublon, Antoine, Stervinou, Julie, Piron, Rozenn, Boyer-Richard, Soline, Jancu, Jean-Marc, Rohel, Tony, Bernard, Rozenn, Léger, Yoan, Bertru, Nicolas, Wu, Jiang, Parkin, Ivan P., Cornet, Charles

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Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 µm by Elias, Georges, Létoublon, Antoine, Piron, Rozenn, Alghoraibi, Ibrahim, Nakkar, Abdulhadi, Chevalier, Nicolas, Tavernier, Karine, Corre, Alain Le, Bertru, Nicolas, Loualiche, Slimane

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Spectral Analysis of 1.55-μm InAs―InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model by GRILLOT, Frédéric, VESELINOV, Kiril, GIOANNINI, Mariangela, MONTROSSET, Ivo, EVEN, Jacky, PIRON, Rozenn, HOMEYER, Estelle, LOUALICHE, Slimane

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High-gain and low-threshold InAs quantum-dot lasers on InP by Caroff, P., Paranthoen, C., Platz, C., Dehaese, O., Folliot, H., Bertru, N., Labbé, C., Piron, R., Homeyer, E., Le Corre, A., Loualiche, S.

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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers by Klaime, K, Calò, C, Piron, R, Paranthoen, C, Thiam, D, Batte, T, Dehaese, O, Le Pouliquen, J, Loualiche, S, Le Corre, A, Merghem, K, Martinez, A, Ramdane, A

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Photoelectrochemical water oxidation of GaP1−xSbx with a direct band gap of 1.65 eV for full spectrum solar energy harvesting by Alqahtani, Mahdi, Sathasivam, Sanjayan, Chen, Lipin, Jurczak, Pamela, Piron, Rozenn, Levallois, Christophe, Létoublon, Antoine, Léger, Yoan, Boyer-Richard, Soline, Bertru, Nicolas, Jean–Marc Jancu, Cornet, Charles, Wu, Jiang, Parkin, Ivan P

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41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band by Dontabactouny, M., Piron, R., Klaime, K., Chevalier, N., Tavernier, K., Loualiche, S., Le Corre, A., Larsson, D., Rosenberg, C., Semenova, E., Yvind, K.

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Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m by Azouigui, S., Dagens, B., Lelarge, F., Provost, J.-G., Make, D., Le Gouezigou, O., Accard, A., Martinez, A., Merghem, K., Grillot, F., Dehaese, O., Piron, R., Loualiche, S., Qin Zou, Ramdane, A.

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Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique by Zhou, D., Piron, R., Dontabactouny, M., Dehaese, O., Grillot, F., Batte, T., Tavernier, K., Even, J., Loualiche, S.

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Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting by Alqahtani, Mahdi, Sathasivam, Sanjayan, Chen, Lipin, Jurczak, Pamela, Piron, Rozenn, Levallois, Christophe, Létoublon, Antoine, Léger, Yoan, Boyer-Richard, Soline, Bertru, Nicolas, Jancu, Jean–Marc, Cornet, Charles, Wu, Jiang, Parkin, Ivan P.

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Photoelectrochemical water oxidation of GaPSb with a direct band gap of 1.65 eV for full spectrum solar energy harvesting by Alqahtani, Mahdi, Sathasivam, Sanjayan, Chen, Lipin, Jurczak, Pamela, Piron, Rozenn, Levallois, Christophe, Létoublon, Antoine, Léger, Yoan, Boyer-Richard, Soline, Bertru, Nicolas, Jancu, Jean-Marc, Cornet, Charles, Wu, Jiang, Parkin, Ivan P

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Study of the characteristics of 1.55 μ m quantum dash/dot semiconductor lasers on InP substrate by Zhou, D., Piron, R., Grillot, F., Dehaese, O., Homeyer, E., Dontabactouny, M., Batte, T., Tavernier, K., Even, J., Loualiche, S.

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Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates by Alghoraibi, I., Rohel, T., Piron, R., Bertru, N., Paranthoen, C., Elias, G., Nakkar, A., Folliot, H., Le Corre, A., Loualiche, S.

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Dynamic properties of InAs/InP(311B) quantum dot Fabry-Perot lasers emitting at 1.52-μm by Martinez, Anthony, Merghem, Kamel, Bouchoule, Sophie, Moreau, Gautier, Ramdane, Abderrahim, Provost, Jean-Guy, Alexandre, Francois, Grillot, Frédéric, Dehaese, Olivier, Piron, Rozenn, Loualiche, Slimane

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Temperature and pressure dependence of the recombination processes in 1.5 µm InAs/InP(311)B quantum dot lasers by Massé, Nicolas, Homeyer, Estelle, Marko, I. P., Adams, A.R., Sweeney, S.J., Dehaese, Olivier, Piron, Rozenn, Grillot, Frederic, Loualiche, Slimane

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Optical feedback tolerance of quantum dot and quantum dash based semiconductor lasers operating at 1.55µm by Azouigui, S., Dagens, B., Lelarge, François, Provost, J.G., Make, D., Le Gouezigou, O., Accard, A., Martinez, Anthony, Merghem, Kamel, Grillot, Frederic, Dehaese, Olivier, Piron, Rozenn, Loualiche, Slimane, Zou, Q., Ramdane, Abderrahim

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Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments by Veselinov, K., Grillot, F., Gioannini, M., Montrosset, I., Homeyer, E., Piron, R., Even, J., Bekiarski, A., Loualiche, S.

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InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate by Klaime, K., Calo, C., Piron, R., Paranthoen, C., Thiam, D., Batte, T., Dehaese, O., Le Pouliquen, J., Loualiche, S., Le Corre, A., Merghem, K., Martinez, A., Ramdane, A.

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First demonstration of a 1.52 µm RT InAs/InP(3 1 1)B laser with an active zone based on a single QD layer by Homeyer, E, Piron, R, Grillot, F, Dehaese, O, Tavernier, K, Macé, E, Le Corre, A, Loualiche, S

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