Simulation of critical IC fabrication processes using advanced physical and numerical methods by Jungling, W., Pichler, P., Selberherr, S., Guerrero, E., Potzl, H.W.

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MINIMOS-A two-dimensional MOS transistor analyzer by Selberherr, S., Schutz, A., Potzl, H.W.

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Temperature distribution and power dissipation in MOSFETs by Schütz, A., Selberherr, S., Pötzl, H.W.

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Simulation of transient boron diffusion during rapid thermal annealing in silicon by HEINRICH, M, BUDIL, M, POTZL, H. W

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Simulation of critical IC-fabrication steps by Pichler, P., Jungling, W., Selberherr, S., Guerrero, E., Potzl, H.W.

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MINIMOS - A Two-Dimensional MOS Transistor Analyzer by Selberherr, S., Schutz, A., Potzl, H.W.

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Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods by Jangling, W., Pichler, P., Selberherr, S., Guerrero, E., Potzl, H.W.

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Fourier transform spectroscopy of Landau radiation in n-InSb by Gornik, E., Müller, W., Pötzl, H.W., Bauer, G., Overhamm, M., Grosse, P.

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Computer simulation of oxygen precipitation in CZ-silicon during rapid thermal anneals by Schrems, M., Pongratz, P., Budil, M., Potzl, H.W., Hage, J., Guerrero, E., Huber, D.

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The influence of a transverse electric field on helicon wave propagation in InSb at 35 GHz by Seifert, F., Potzl, H.W.

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Electric measurement of impurity concentration in p-type epitaxially grown and ion-implanted base regions by Incecik, A.Z., Pötzl, H.W.

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High-frequency behavior of hot electrons in one-valley polar semiconductors by Bonek, E., Pötzl, H.W., Richter, K.

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Simulation of Critical IC-Fabrication Steps by Pichler, P., Jungling, W., Selberherr, S., Guerrero, E., Potzl, H.P.

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Analysis of Breakdown Phenomena in MOSFET's by Schutz, A., Selberherr, S., Potzl, H.W.

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Simulation of arsenic and boron diffusion during rapid thermal annealing in Silicon by Heinrich, Michael, Budil, Matthias, Potzl, Hans W.

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Microwave conductivity anisotropy of hot electrons in n-InSb at 77°k by Potzl, H.W., Richter, K.

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MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage by FICHTNER, W., PÖTZL, H. W.

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Constraints on black-hole charges with the 2017 EHT observations of M87 by Rezzolla, Luciano, Kramer, Michael, Alberdi, Antxon, Azulay, Rebecca, Baczko, Anne-Kathrin, Benson, Bradford A., Blackburn, Lindy, Blundell, Raymond, Boland, Wilfred, Bouman, Katherine L., Boyce, Hope, Bremer, Michael, Brinkerink, Christiaan D., Bronzwaer, Thomas, Carlstrom, John E., Chael, Andrew, Chan, Chi-kwan, Chatterjee, Shami, Chatterjee, Koushik, Chen, Ming-Tang, Chen, Yongjun, Chesler, Paul M., Christian, Pierre, Cruz-Osorio, Alejandro, De Laurentis, Mariafelicia, Deane, Roger, Dempsey, Jessica, Desvignes, Gregory, Farah, Joseph, Fish, Vincent L., Fraga-Encinas, Raquel, Fuentes, Antonio, García, Roberto, Gentaz, Olivier, Goddi, Ciriaco, Gold, Roman, Gu, Minfeng, Haggard, Daryl, Huang, Lei, Ikeda, Shiro, Jannuzi, Buell T., Janssen, Michael, Jeter, Britton, Jiang, Wu, Jimenez-Rosales, Alejandra, Jung, Taehyun, Karuppusamy, Ramesh, Kim, Dong-Jin, Koyama, Shoko, Kuo, Cheng-Yu, Levis, Aviad, Lindqvist, Michael, Lico, Rocco, Lindahl, Greg, Liu, Kuo, Liuzzo, Elisabetta, Lo, Wen-Ping, Lonsdale, Colin, Marchili, Nicola, Menten, Karl M., Mizuno, Izumi, Mejías, Alejandro Mus, Nagar, Neil M., Neri, Roberto, Ni, Chunchong, Noutsos, Aristeidis, Okino, Hiroki, Oyama, Tomoaki, Özel, Feryal, Palumbo, Daniel C. M., Patel, Nimesh, Pesce, Dominic W., Plambeck, Richard, Porth, Oliver, Prather, Ben, Ramakrishnan, Venkatessh, Ripperda, Bart, Rogers, Alan, Ros, Eduardo, Roshanineshat, Arash, Ruszczyk, Chet, Rygl, Kazi L. J., Sánchez-Arguelles, David, Savolainen, Tuomas, Shen, Zhiqiang, Small, Des, Tiede, Paul, Tilanus, Remo P. J., Torne, Pablo, Trippe, Sascha, van Langevelde, Huib Jan, Ward-Thompson, Derek, Wardle, John, Wex, Norbert, Wielgus, Maciek, Wu, Qingwen, Yuan, Feng, Yuan, Ye-Fei, Zhao, Shan-Shan, EHT Collaboration

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Long-term results of the metal-cancellous cementless Lübeck total hip arthroplasty: a critical review at 12.8 years by Götze, C, Tschugunow, A, Götze, H G, Böttner, F, Pötzl, W, Gosheger, G

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Channeling of boron in silicon: experiments and simulation by Hobler, G., Potzl, H., Schork, R., Lorenz, J., Gara, S., Stingeder, G.

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