Search Results - Pala, Vipindas

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  1. 1
    Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

    Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors by Chow, T. Paul, Omura, Ichiro, Higashiwaki, Masataka, Kawarada, Hiroshi, Pala, Vipindas

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  2. 2
    Integrated High-Frequency Power Converters Based on GaAs pHEMT: Technology Characterization and Design Examples

    Integrated High-Frequency Power Converters Based on GaAs pHEMT: Technology Characterization and Design Examples by Pala, V., Han Peng, Wright, P., Hella, M. M., Chow, T. P.

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  3. 3
    Avalanche Breakdown Design Parameters in GaN

    Avalanche Breakdown Design Parameters in GaN by Li, Zhongda, Pala, Vipindas, Chow, T. Paul

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  4. 4
    Gallium Arsenide IC Technology for Power Supplies on Chip

    Gallium Arsenide IC Technology for Power Supplies on Chip by Pala, Vipindas, Peng, Han, Hella, Mona Mostafa, Chow, T. Paul

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  5. 5
    Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors

    Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors by Pala, V., Hella, M., Chow, T. P.

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  6. 6
    Double Recessed GaAs pHEMTs for 20-50 V Power Switching

    Double Recessed GaAs pHEMTs for 20-50 V Power Switching by Pala, Vipindas, Hella, Mona, Chow, T. Paul

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  7. 7
    Operation of 4H-SiC Schottky diodes at dV/dt values over 700 kV/μs

    Operation of 4H-SiC Schottky diodes at dV/dt values over 700 kV/μs by Van Brunt, Edward, Gangyao Wang, Liu, Jimmy, Pala, Vipindas, Hull, Brett, Richmond, Jim, Palmour, John

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  8. 8
    High efficiency, high switching speed, AlGaAs/GaAs P-HEMT DC–DC converter for integrated power amplifier modules

    High efficiency, high switching speed, AlGaAs/GaAs P-HEMT DC–DC converter for integrated power amplifier modules by Peng, Han, Pala, Vipindas, Wright, Peter, Chow, T. Paul, Hella, Mona Mostafa

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  9. 9
    100 MHz, 85% efficient integrated AlGaAs/GaAs supply modulator for RF power amplifier modules

    100 MHz, 85% efficient integrated AlGaAs/GaAs supply modulator for RF power amplifier modules by Han Peng, Pala, V., Chow, T. P., Hella, M. M.

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  10. 10
    10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

    10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems by Pala, Vipindas, Brunt, Edward V., Lin Cheng, O'Loughlin, Michael, Richmond, Jim, Burk, Albert, Allen, Scott T., Grider, David, Palmour, John W., Scozzie, Charles J.

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  11. 11
    High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications

    High performance, large-area, 1600 V / 150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications by Lin Cheng, Agarwal, Anant K., Schupbach, Marcelo, Gajewski, Donald A., Lichtenwalner, Daniel J., Pala, Vipindas, Sei-Hyung Ryu, Richmond, Jim, Palmour, John W., Ray, William, Schrock, James, Bilbao, Argenis, Bayne, Stephen, Lelis, Aivars, Scozzie, Charles

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  12. 12
    Application of GaAs pHEMT technology for efficient high-frequency switching regulators

    Application of GaAs pHEMT technology for efficient high-frequency switching regulators by Pala, V, Peng, H, Hella, M, Chow, T P

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  13. 13
    900V silicon carbide MOSFETs for breakthrough power supply design

    900V silicon carbide MOSFETs for breakthrough power supply design by Pala, Vipindas, Barkley, Adam, Hull, Brett, Gangyao Wang, Sei-Hyung Ryu, Van Brunt, Edward, Lichtenwalner, Daniel, Richmond, Jim, Jonas, Charlotte, Capell, Craig, Allen, Scott, Casady, Jeffrey, Grider, David, Palmour, John

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  14. 14
    Gallium arsenide IC technology for power supplies on chip

    Gallium arsenide IC technology for power supplies on chip by Pala, Vipindas, Han Peng, Hella, Mona, Chow, T. Paul

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