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Search Results - Pandharpure, S. J.
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Influence of drift region on the 1/f noise in LDMOS
by
Dikshit, A. A.
,
Subramanian, V.
,
Pandharpure, S. J.
,
Sirohi, S.
,
Letavic, T. J.
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Statistical Compact Model Extraction: A Neural Network Approach
by
Viraraghavan, J.
,
Pandharpure, S. J.
,
Watts, J.
Published in
IEEE transactions on computer-aided design of integrated circuits and systems
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Temperature dependent empirical modeling of proximity diffused Si esaki diodes and memory circuits
by
Pawlik, D.J.
,
Muhkerjee, S.
,
Krom, R.
,
Pandharpure, S.
,
Kurinec, S.K.
,
Anisha, R.
,
Berger, P.R.
,
Rommel, S.L.
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Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
by
Krom, R.
,
Pawlik, D.J.
,
Muhkerjee, S.
,
Pandharpure, S.
,
Kurinec, S.K.
,
Park, S.-Y.
,
Anisha, R.
,
Berger, P.R.
,
Thompson, P.E.
,
Rommel, S.L.
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