Search Results - Pannirselvam, Somasuntharam

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  1. 1
    High voltage AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process

    High voltage AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process by Liu, Xinke, Bhuiyan, Maruf Amin, Somasuntharam, Pannirselvam S/O, Soh, Chew Beng, Liu, Zhihong, Chi, Dong Zhi, Liu, Wei, Lu, Youming, Yu, Wenjie, Tan, Leng Seow, Yeo, Yee-Chia

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  2. 2
    AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating by Liu, Xinke, Lu, Youming, Yu, Wenjie, Wu, Jing, He, Jiazhu, Tang, Dan, Liu, Zhihong, Somasuntharam, Pannirselvam, Zhu, Deliang, Liu, Wenjun, Cao, Peijiang, Han, Sun, Chen, Shaojun, Seow Tan, Leng

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  3. 3
    Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation

    Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation by Liu, Xinke, Liu, Zhihong, Pannirselvam, Somasuntharam, Pan, Jishen, Liu, Wei, Jia, Fang, Lu, Youming, Liu, Chang, Yu, Wenjie, He, Jin, Tan, Leng Seow

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  4. 4
    Band alignment of HfAIO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH sub(4) passivation

    Band alignment of HfAIO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH sub(4) passivation by Liu, Xinke, Liu, Zhihong, Pannirselvam, Somasuntharam, Pan, Jishen, Liu, Wei, Jia, Fang, Lu, Youming, Liu, Chang, Yu, Wenjie, He, Jin, Tan, Leng Seow

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  5. 5
    High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In 0.14 Ga 0.86 N contact using a CMOS compatible gold-free process

    High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In 0.14 Ga 0.86 N contact using a CMOS compatible gold-free process by Liu, Xinke, Bhuiyan, Maruf Amin, Somasuntharam, Pannirselvam S/O, Soh, Chew Beng, Liu, Zhihong, Chi, Dong Zhi, Liu, Wei, Lu, Youming, Yu, Wenjie, Tan, Leng Seow, Yeo, Yee-Chia

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