Search Results - Pantellini, Alessio

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  1. 1
    Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

    Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Stocco, Antonio, Chini, Alessandro, Pantellini, Alessio, Lanzieri, Claudio, Nanni, Antonio, Meneghesso, Gaudenzio, Zanoni, Enrico

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  2. 2
    Reliability Investigation of GaN HEMTs for MMICs Applications

    Reliability Investigation of GaN HEMTs for MMICs Applications by Chini, Alessandro, Meneghesso, Gaudenzio, Pantellini, Alessio, Lanzieri, Claudio, Zanoni, Enrico

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  3. 3
    Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

    Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design by Bisi, Davide, Chini, Alessandro, Soci, Fabio, Stocco, Antonio, Meneghini, Matteo, Pantellini, Alessio, Nanni, Antonio, Lanzieri, Claudio, Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, di-Forte-Poisson, Marie-Antoinette, Meneghesso, Gaudenzio, Zanoni, Enrico

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  4. 4
    Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs

    Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Stocco, Antonio, Cester, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Chini, Alessandro, Pantellini, Alessio, Lanzieri, Claudio

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  5. 5
    Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

    Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate by Crispoldi, Flavia, Pantellini, Alessio, Lavanga, Simone, Nanni, Antonio, Romanini, Paolo, Rizzi, Leonardo, Farinelli, Paola, Lanzieri, Claudio

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  6. 6
    Performance assessment of GaN HEMT technologies for power limiter and switching applications

    Performance assessment of GaN HEMT technologies for power limiter and switching applications by Pantellini, Alessio, Peroni, Marco, Nanni, Antonio, Bettidi, Andrea

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  7. 7
    GaN Field Effect Transistors with integrated antennas for THz heterodyne detectors

    GaN Field Effect Transistors with integrated antennas for THz heterodyne detectors by Dispenza, Massimiliano, Crispoldi, Flavia, Pantellini, Alessio, Nanni, Antonio, Lanzieri, Claudio, Di Gaspare, Alessandra, Giliberti, Valeria, Casini, Roberto, Ortolani, Michele, Giovine, Ennio, Evangelisti, Florestano

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  8. 8
    Gate technology and substrate property influence on GaN HEMT switch device performance

    Gate technology and substrate property influence on GaN HEMT switch device performance by Pantellini, A., Peroni, M., Nanni, A., Cetronio, A., Bettidi, A., Giovine, E.

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  9. 9
    Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications

    Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications by Zagni, Nicolo, Gao, Veronica Zhan, Verzellesi, Giovanni, Chini, Alessandro, Pantellini, Alessio, Natali, Marco, Lucibello, Andrea, Latessa, Luca, Lanzieri, Claudio, Santi, Carlo De, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico

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