Search Results - Parab, K.B.

  • Showing 1 - 3 results of 3
Refine Results
  1. 1
    Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

    Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon by Shyh-Horng Yang, Morris, S.J., Shiyang Tian, Parab, K.B., Tasch, A.F.

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  2. 2
    Base and collector leakage currents and their relevance to the reliability of AlGaAs/GaAs heterojunction bipolar transistors

    Base and collector leakage currents and their relevance to the reliability of AlGaAs/GaAs heterojunction bipolar transistors by Liou, J.J., Parab, K.B., Huang, C.I., Bayraktaroglu, B., Williamson, D.C.

    Request full text
    Conference Proceeding
    Save to List
    Saved in:
  3. 3
    Detailed analysis and computationally efficient modeling of ultra-shallow as-implanted profiles obtained by low energy B, BF/sub 2/, and As ion implantation

    Detailed analysis and computationally efficient modeling of ultra-shallow as-implanted profiles obtained by low energy B, BF/sub 2/, and As ion implantation by Parab, K.B., Morris, M.F., Yang, S.-H., Morris, S.J., Tian, S., Obradovic, B., Tasch, A.F., Kamenitsa, D., Simonton, R., Magee, C.

    Request full text
    Conference Proceeding
    Save to List
    Saved in:

Search Tools: