Search Results - Parnes, Ya M

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  1. 1
    Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

    Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation by Tikhomirov, V. G., Zemlyakov, V. E., Volkov, V. V., Parnes, Ya. M., Vyuginov, V. N., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Cherkashin, N. A., Mizerov, M. N., Ustinov, V. M.

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  2. 2
    Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas

    Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas by Vendik, O. G., Vendik, I. B., Tural’chuk, P. A., Parnes, Ya. M., Parnes, M. D.

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  3. 3
    AlN/GaN heterostructures for normally-off transistors

    AlN/GaN heterostructures for normally-off transistors by Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Tereshenko, O. E., Abgaryan, K. K., Reviznikov, D. L., Zemlyakov, V. E., Egorkin, V. I., Parnes, Ya. M., Tikhomirov, V. G., Prosvirin, I. P.

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  4. 4
    Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

    Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel by Emtsev, V. V., Zavarin, E. E., Kozlovskii, M. A., Kudoyarov, M. F., Lundin, V. V., Oganesyan, G. A., Petrov, V. N., Poloskin, D. S., Sakharov, A. V., Troshkov, S. I., Shmidt, N. M., V’yuginov, V. N., Zybin, A. A., Parnes, Ya. M., Vidyakin, S. I., Gudkov, A. G., Chernyakov, A. E., Kozlovskii, V. V.

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  5. 5
    Normally off transistors based on in situ passivated AlN/GaN heterostructures

    Normally off transistors based on in situ passivated AlN/GaN heterostructures by Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Zemlyakov, V. E., Egorkin, V. I., Parnes, Ya. M.

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  6. 6
    Evaluation of the influence mode on the CVC GaN HEMT using numerical modeling

    Evaluation of the influence mode on the CVC GaN HEMT using numerical modeling by Parnes, Ya M, Tikhomirov, V G, Petrov, V A, Gudkov, A G, Marzhanovskiy, I N, Kukhareva, E S, Vyuginov, V N, Volkov, V V, Zybin, A A

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  7. 7
    Impact of nanomaterial arrangement on the reliability and the electron mobility in AlGaN GaN HEMTs

    Impact of nanomaterial arrangement on the reliability and the electron mobility in AlGaN GaN HEMTs by Vidyakin, S I, Gudkov, A G, Oganesyan, G A, Petrov, V N, Sakharov, A V, Shabunina, E I, Zybin, A A, Parnes, Ya M

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  8. 8
    The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial

    The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial by Emtsev, V. V., Zavarin, E. E., Oganesyan, G. A., Petrov, V. N., Sakharov, A. V., Shmidt, N. M., V’yuginov, V. N., Zybin, A. A., Parnes, Ya. M., Vidyakin, S. I., Gudkov, A. G., Chernyakov, A. E.

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