Photoluminescence in silicon implanted with erbium ions at an elevated temperature by Sobolev, N. A., Kalyadin, A. E., Shek, E. I., Sakharov, V. I., Serenkov, I. T., Vdovin, V. I., Parshin, E. O., Makoviichuk, M. I.

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Structural defects and dislocation-related photoluminescence in erbium-implanted silicon by Sobolev, N.A., Emel'yanov, A.M., Shek, E.I., Sakharov, V.I., Serenkov, I.T., Nikolaev, Yu.A., Vdovin, V.I., Yugova, T.G., Makovijchuk, M.I., Parshin, E.O., Pizzini, S.

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Extended defects in Si wafers implanted with ions of rare-earth elements by Vdovin, V.I., Yugova, T.G., Sobolev, N.A., Shek, E.I., Makovijchuk, M.I., Parshin, E.O.

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Flicker noise in ion-implanted silicon structures by Makoviychuk, M.I., Parshin, E.O., Rekshinskii, V.A.

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Nuclear methods in technology of Si:Er structures by Naidenov, V.O., Sobolev, N.A., Alexandrov, O.B., Bresler, M.S., Gusev, O.V., Gusinskii, G.M., Shek, E.I., Makaviichuk, M.I., Parshin, E.O.

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