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Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
by
Samartsev, I. V.
,
Nekorkin, S. M.
,
Zvonkov, B. N.
,
Aleshkin, V. Ya
,
Dubinov, A. A.
,
Pashenkin, I. J.
,
Dikareva, N. V.
,
Chigineva, A. B.
Published in
Semiconductors (Woodbury, N.Y.)
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Semiconductors
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2018
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Buffer Layers
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Buffers
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Chemical Vapor Deposition
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Crystal Growth
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Dark Current
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Epitaxial Growth
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Gallium Arsenide
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Gallium Arsenides
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Gallium Indium Phosphide
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Indium Arsenides
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Indium Gallium Arsenides
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Magnetic Materials
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Magnetism
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March 12–15
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Materials Science
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Nizhny Novgorod
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Organic Chemistry
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Photodiodes
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Photosensitivity
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Springer Nature
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