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    Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications

    Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications by Baud, L., Passermard, G., Gobil, Y., M'Saad, H., Corte, A., Pires, F., Fugier, P., Noel, P., Rabinzohn, P., Beinglass, I.

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