A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications by Pekarik, John J., Adkisson, J., Gray, P., Liu, Q., Camillo-Castillo, R., Khater, M., Jain, V., Zetterlund, B., DiVergilio, A., Tian, X., Vallett, A., Ellis-Monaghan, J., Gross, B. J., Cheng, P., Kaushal, V., He, Z., Lukaitis, J., Newton, K., Kerbaugh, M., Cahoon, N., Vera, L., Zhao, Y., Long, J. R., Valdes-Garcia, A., Reynolds, S., Lee, W., Sadhu, B., Harame, D.

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On the Challenges of SiGe HBTs in Advanced BiCMOS Technology Toward Half THz fMAX by Liu, Qizhi, Jain, Vibhor, Camillo-Castillo, Renata A, Pekarik, John J, Adkisson, James W., Joseph, Alvin, Harame, David L.

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A 900μW, 3-5GHz integrated FM-UWB transmitter in 90nm CMOS by Saputra, Nitz, Long, John R, Pekarik, John J

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A 2.2 mW regenerative FM-UWB receiver in 65 nm CMOS by Saputra, Nitz, Long, John R, Pekarik, John J

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Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process by Hongmei Li, Jagannathan, B., Jing Wang, Tai-Chi Su, Sweeney, S., Pekarik, J.J., Yun Shi, Greenberg, D., Zhenrong Jin, Groves, R., Wagner, L., Csutak, S.

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High Performance SiGe HBT Performance Variability Learning by Utilizing Neural Networks and Technology Computer Aided Design by Aldridge, Henry Lee, Johnson, Jeffrey B, Krishnasamy, Rajendran, Jain, Vibhor, Mishra, Rahul, Dongmo, Pernell, Raghunathan, Uppili, Pekarik, John J

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A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS by Chan, W.L., Long, J.R., Spirito, M., Pekarik, J.J.

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A low-power digitally controlled wideband FM transceiver by Saputra, N., Long, John R., Pekarik, John J.

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A 120µW fully-integrated BPSK receiver in 90nm CMOS by Yan, Han, Macias-Montero, Jose Gabriel, Akhnoukh, Atef, de Vreede, Leo C N, Long, John R, Pekarik, John J, Burghartz, Joachim N

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On the Challenges of SiGe HBTs in Advanced BiCMOS Technology Toward Half THz f MAX by Liu, Qizhi, Jain, Vibhor, Camillo-Castillo, Renata A, Pekarik, John J, Adkisson, James W., Joseph, Alvin, Harame, David L.

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An electrothermal PIN diode model with substrate injection by DiVergilio, Adam W., Pekarik, John J., Jain, Vibhor

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High-resolution 60-GHz DCOs with reconfigurable distributed metal capacitors in passive resonators by Wanghua Wu, Long, John R., Staszewski, R. B., Pekarik, J. J.

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A 56-to-65GHz Injection-Locked Frequency Tripler with Quadrature Outputs in 90nm CMOS by Chan, Wei L., Long, John R., Pekarik, John J.

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A frequency-selective nested dual-loop broadband low-noise amplifier in 90 nm CMOS by Bagga, S., Mansano, A. L., Serdijn, W. A., Long, J. R., Philips, K., Pekarik, J. J.

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Study of mutual and self-thermal resistance in 90nm SiGe HBTs by Jain, Vibhor, Zetterlund, Bjorn, Peng Cheng, Camillo-Castillo, Renata A., Pekarik, John J., Adkisson, James W., Qizhi Liu, Gray, Peter B., Kaushal, Vikas, Kessler, Thomas, Harame, David

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Deep levels in Te-doped AlSb grown by molecular beam epitaxy by Nakagawa, Atsushi, Pekarik, John J., Kroemer, Herbert, English, John H.

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A 34dB SNDR instantaneously-companding baseband SC filter for 802.11a/g WLAN receivers by Maheshwari, V., Serdijn, W.A., Long, J.R., Pekarik, J.J.

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A 23-to-29GHz Differentially Tuned Varactorless VCO in 0.13μm CMOS by Kwok, KaChun, Long, John R., Pekarik, John J.

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A high-linearity, LC-Tuned, 24-GHz T/R switch in 90-nm CMOS by Piljae Park, Dong Hun Shin, Pekarik, J.J., Rodwell, M., Yue, C.P.

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Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology by Pekarik, John J., Adkisson, James W., Camillo-Castillo, Renata, Cheng, Peng, DiVergilio, Adam W., Gray, Peter B., Jain, Vibhor, Kaushal, Vikas, Khater, Marwan H., Liu, Qizhi, Harame, David L.

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