Search Results - Penumatcha, Ashish V

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  1. 1
    Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors

    Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors by Shen, Tingting, Penumatcha, Ashish V, Appenzeller, Joerg

    Published in ACS nano
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  2. 2
    Origins and Characteristics of the Threshold Voltage Variability of Quasiballistic Single-Walled Carbon Nanotube Field-Effect Transistors

    Origins and Characteristics of the Threshold Voltage Variability of Quasiballistic Single-Walled Carbon Nanotube Field-Effect Transistors by Cao, Qing, Han, Shu-jen, Penumatcha, Ashish V, Frank, Martin M, Tulevski, George S, Tersoff, Jerry, Haensch, Wilfried E

    Published in ACS nano
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  3. 3
    Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

    Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model by Penumatcha, Ashish V., Salazar, Ramon B., Appenzeller, Joerg

    Published in Nature communications
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  4. 4
    Spin-torque switching of a nano-magnet using giant spin hall effect

    Spin-torque switching of a nano-magnet using giant spin hall effect by Penumatcha, Ashish V., Das, Suprem R., Chen, Zhihong, Appenzeller, Joerg

    Published in AIP advances
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  5. 5
    Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

    Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model by Penumatcha, Ashish V., Salazar, Ramon B., Appenzeller, Joerg

    Published in Nature communications
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  6. 6
    Impact of Scaling on the Dipolar Coupling in Magnet-Insulator-Magnet Structures

    Impact of Scaling on the Dipolar Coupling in Magnet-Insulator-Magnet Structures by Penumatcha, Ashish V., Chia-Ching Lin, Diep, Vinh Q., Datta, Supriyo, Appenzeller, Joerg, Zhihong Chen

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  7. 7
    Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

    Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model by Penumatcha, Ashish V, Salazar, Ramon B, Appenzeller, Joerg

    Published in Nature communications
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  8. 8
    Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors

    Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors by Cao, Qing, Tersoff, Jerry, Han, Shu-Jen, Penumatcha, Ashish V.

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  9. 9
    Limitations of the High - Low C - V Technique for MOS Interfaces With Large Time Constant Dispersion

    Limitations of the High - Low C - V Technique for MOS Interfaces With Large Time Constant Dispersion by Penumatcha, A. V., Swandono, S., Cooper, J. A.

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