Search Results - Peschang, M.

  • Showing 1 - 2 results of 2
Refine Results
  1. 1
    LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

    LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices by di Forte Poisson, M.-A., Magis, M., Tordjman, M., Aubry, R., Sarazin, N., Peschang, M., Morvan, E., Delage, S.L., di Persio, J., Quéré, R., Grimbert, B., Hoel, V., Delos, E., Ducatteau, D., Gaquiere, C.

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  2. 2
    LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

    LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices by Di Forte-Poisson, Marie-Antoinette, Magis, M., Tordjman, Maurice, Aubry, Raphaël, Sarazin, Nicolas, Peschang, M., Morvan, Erwan, Delage, Sylvain Laurent, Di Persio, J., Quere, R., Grimbert, B., Hoel, Virginie, Delos, E., Ducatteau, Damien, Gaquière, Christophe

    Get full text
    Article
    Save to List
    Saved in:

Search Tools: