Search Results - Philipsen, Harold G. G.

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  1. 1
    Influence of chemical additives on the surface reactivity of Si in KOH solution

    Influence of chemical additives on the surface reactivity of Si in KOH solution by Philipsen, Harold G.G., Kelly, John J.

    Published in Electrochimica acta
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  2. 2
    Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

    Anisotropy in the Anodic Oxidation of Silicon in KOH Solution by Philipsen, Harold G. G, Kelly, John J

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  3. 3
    3-D Wafer-Level Packaging Die Stacking Using Spin-on-Dielectric Polymer Liner Through-Silicon Vias

    3-D Wafer-Level Packaging Die Stacking Using Spin-on-Dielectric Polymer Liner Through-Silicon Vias by Civale, Y, Tezcan, D S, Philipsen, H G G, Duval, F F C, Jaenen, P, Travaly, Y, Soussan, P, Swinnen, B, Beyne, E

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  4. 4
    The Role of Benzotriazole in Electrodeposition of Cu1−xNix Alloys (0.05 < x < 0.15) on Cu and Ni Substrates

    The Role of Benzotriazole in Electrodeposition of Cu1−xNix Alloys (0.05 < x < 0.15) on Cu and Ni Substrates by Haesevoets, Karel P. S., Philipsen, Harold G.G., Vereecken, Philippe M.

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  5. 5
    Anisotropy in the wet-etching of semiconductors

    Anisotropy in the wet-etching of semiconductors by Kelly, John J., Philipsen, Harold G.G.

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  6. 6
    (Invited) Through-Silicon Via Technology for 3D Applications

    (Invited) Through-Silicon Via Technology for 3D Applications by Philipsen, Harold G., Lühn, Ole, Civale, Yann, Wang, Yu-Shuen, Sabuncuoglu Tezcan, Deniz, Ruythooren, Wouter

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  7. 7
    Exploiting Anisotropy for In Situ Measurement of Silicon Etch Rates in KOH Solution

    Exploiting Anisotropy for In Situ Measurement of Silicon Etch Rates in KOH Solution by Philipsen, Harold G. G., Smeenk, Niek J., Ligthart, Hans, Kelly, John J.

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  8. 8
    TSV Cu Plating and Implications for CMP

    TSV Cu Plating and Implications for CMP by Radisic, Aleksandar, Philipsen, Harold, Honore, Mia, Wang, Yu-Shuen, Heylen, Nancy, El-Mekki, Zaid, Armini, Silvia, Vandersmissen, Kevin, Rodet, Simon, Van Ammel, Annemie, Bender, Hugo, Drijbooms, Christel, Vanstreels, Kris, Ruythooren, Wouter

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  9. 9
    Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-silicon via interconnects

    Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-silicon via interconnects by Civale, Y., Armini, S., Philipsen, H., Redolfi, A., Velenis, D., Croes, K., Heylen, N., El-Mekki, Z., Vandersmissen, K., Beyer, G., Swinnen, B., Beyne, E.

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  10. 10
    Through-silicon via technology for three-dimensional integrated circuit manufacturing

    Through-silicon via technology for three-dimensional integrated circuit manufacturing by Civale, Y., Redolfi, A., Jaenen, P., Kostermans, M., Van Besien, E., Mertens, S., Witters, T., Jourdan, N., Armini, S., El-Mekki, Z., Vandersmissen, K., Philipsen, H., Verdonck, P., Heylen, N., Nolmans, P., Yunlong Li, Croes, K., Beyer, G., Swinnen, B., Beyne, E.

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