A new method for determining the FET small-signal equivalent circuit by Dambrine, G., Cappy, A., Heliodore, F., Playez, E.

Get full text

High-frequency performance of submicrometer channel-length silicon MOSFETs by Raynaud, C., Gautier, J., Guegan, G., Lerme, M., Playez, E., Dambrine, G.

Get full text

Characterization of GaAs and InGaAs double-quantum well heterostructure FETs by Theron, D., Bonte, B., Gaquiere, C., Playez, E., Crosnier, Y.

Get full text

Properties and performance of the prototype instrument for the Pierre Auger Observatory by Abraham, J., Allard, D., do Amaral, M.G., Argiro, S., Baggio, R., Bai, X., Beatty, J., Beau, T., Becker, K.-H., Bellido, J.A., Bertou, X., Bollmann, E., Bonifazi, C., Brunet, J.-M., Caruso, R., Castro, J., Cazon, L., Chou, A., Civit, B., Claes, D., Cordero, A., Cordier, A., Coutu, S., Dawson, B.R., De Capoa, A., de Oliveira, M.A.L., Della Selva, A., Dobrigkeit, C., Dorofeev, A., Dova, M.T., Dye, A., Engel, R., Epele, L.N., Eschstruth, P., Facal San Luis, P., Fazzini, N., Ferrero, A.M.J., Fick, B., Filipčič, A., Fonte, R., Fulgione, W., Gómez Berisso, M., González, J., Grillo, A.F., Guarino, F., Guerard, C., Homola, P., Horvat, M., Insolia, A., Kemp, E., Klages, H., Kunka, N., Kutschera, M., Lachaud, C., López, R., Manhaes, L., Martinez, J., Martı́nez, O., Marques, E., Matussek, P., Mazur, P., Nerling, F., Nigro, S., Nogima, H., Nosek, D., Nuñez, M., Olinto, A., Parente, G., Pastrone, N., Petrinca, P., Playez, N., Privitera, P., Pryke, C.L., Ratti, L., Ridky, J., Robledo, C., Schovanek, P., Scherini, V., Shellard, R.C., Siguas, F.V., Slater, W., Smetniansky-De Grande, N., Smith, K., Suarez, F., Supanitsky, D., Szadkowski, Z., Tamashiro, A., Ticona, R., Trombley, M., Uribe Estrada, C., Veiga, A., Vernotte, F., Vigorito, C., Vo-Van, T., Walker, P., Watson, A.A., Zas, E., Zavrtanik, D., Zhang, C., Zhu, Q.

Get full text