Wafer-scale microdevice transfer/interconnect: its application in an AFM-based data-storage system by Despont, M., Drechsler, U., Yu, R., Pogge, H.B., Vettiger, P.

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Development of high performance interfill materials for system chips technology by Jiali Wu, Bhattacharya, S., Lloyd, C., Wong, C.P., Pogge, H.B., Tummala, R.R.

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The next chip challenge: effective methods for viable mixed technology SoCs by Pogge, H.B.

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Wafer-scale microdevice transfer/interconnect: from a new integration method to its application in an afm-based data-storage system by Despont, M., Drechsler, U., Yu, R., Pogge, H.B., Vettiger, P.

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The heteroepitaxial growth of GaP films on Si substrates by Pogge, H.B., Kemlage, B.M., Broadie, R.W.

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Evaluation and characterization of high-performance filling encapsulants for system chips application by Jiali Wu, Bhattacharya, S.K., Wong, M., Lloyd, C., Tummala, R.R., Wong, C.P., Pogge, H.B.

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Doping behavior of silicon in vapor-grown III–V epitaxial films by Pogge, H.B., Kemlage, B.M.

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Preparation and properties of heteroepitaxial GaP films on Si substrates by Pogge, H.B, Kemlage, B.M, Broadie, R.W

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Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication by Guarini, K.W., Topol, A.W., Ieong, M., Yu, R., Shi, L., Newport, M.R., Frank, D.J., Singh, D.V., Cohen, G.M., Nitta, S.V., Boyd, D.C., O'Neil, P.A., Tempest, S.L., Pogge, H.B., Purushothaman, S., Haensch, W.E.

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Effects of temperature and additives in the radiolysis of potassium nitrate by Pogge, Hans B, Jones, Francis Thomas

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