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Evidence of distributed energy border traps at Al2O3/p-diamond interface
by
Pohekar, Prachi
,
Parvez, Bazila
,
Ganguly, Swaroop
,
Saha, Dipankar
Published in
Diamond and related materials
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Heat diffusion governing universal trend in saturation current and power in AlGaN/GaN high electron mobility transistors in pulsed operation
by
Parvez, Bazila
,
Pohekar, Prachi
,
Ganguly, Swaroop
,
Saha, Dipankar
Published in
Solid-state electronics
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Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb 2 O 5 gate dielectric
by
Bhardwaj, Navneet
,
Upadhyay, Bhanu B
,
Parvez, Bazila
,
Pohekar, Prachi
,
Yadav, Yogendra
,
Sahu, Arpit
,
Patil, Mahalaxmi
,
Basak, Subhajit
,
Sahu, Jyoti
,
Sabiha, Farheen Shamim Ahmed
,
Ganguly, Swaroop
,
Saha, Dipankar
Published in
Physica scripta
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Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric
by
Bhardwaj, Navneet
,
Upadhyay, Bhanu B
,
Parvez, Bazila
,
Pohekar, Prachi
,
Yadav, Yogendra
,
Sahu, Arpit
,
Patil, Mahalaxmi
,
Basak, Subhajit
,
Sahu, Jyoti
,
Sabiha, Farheen Shamim Ahmed
,
Ganguly, Swaroop
,
Saha, Dipankar
Published in
Physica scripta
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Institute Of Physics Iopscience Extra
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