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Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation
by
Poling, B.S.
,
Via, G.D.
,
Bole, K.D.
,
Johnson, E.E.
,
McDermott, J.M.
Published in
Microelectronics and reliability
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Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing
by
Poling, B.S.
,
Brown, J.L.
,
Heller, E.R.
,
Stumpff, B.
,
Beckman, J.A.
,
Hilton, A.M.
Published in
Microelectronics and reliability
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Microelectronics And Reliability
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Engineering
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Engineering, Electrical & Electronic
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Gallium Nitride
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High Electron Mobility Transistors
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Electroluminescence
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Sciencedirect Freedom Collection 2022-2024
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Backfile Package - Engineering And Technology [Yen]
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