Search Results - Poloskin, Dmitrii S.

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  1. 1
    Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers

    Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers by Bagraev, Nikolay T., Gehlhoff, Wolfgang, Klyachkin, Leonid E., Kudryavtsev, Andrey A., Malyarenko, Anna M., Oganesyan, Gagik A., Poloskin, Dmitrii S., Romanov, Vladimir V.

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  2. 2
    Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures

    Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures by EMTSEV, V. V, EHRHART, P, POLOSKIN, D. S, EMTSEV, K. V

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  3. 3
    Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers

    Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers by BAGRAEV, Nikolay T, GEHLHOLF, Wolfgang, KLYACHKIN, Leonid E, KUDRYAVTSEV, Andrey A, MALYARENKO, Anna M, OGANESYAN, Gagik A, POLOSKIN, Dmitrii S, ROMANOV, Vladimir V

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  4. 4
    Shallow donor impurity of bismuth in silicon: Peculiar electrical properties of bismuth-related defects produced by electron irradiation

    Shallow donor impurity of bismuth in silicon: Peculiar electrical properties of bismuth-related defects produced by electron irradiation by Emtsev, Vadim, Abrosimov, Nikolay, Kozlovski, Vitalii, Oganesyan, Gagik, Poloskin, Dmitrii

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  5. 5
    Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation

    Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation by Emtsev, Vadim, Abrosimov, Nikolay, Kozlovski, Vitalii, Lastovskii, Stanislav, Oganesyan, Gagik, Poloskin, Dmitrii

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  6. 6
    Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects

    Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects by Emtsev, Vadim, Abrosimov, Nikolay, Kozlovski, Vitalii, Lastovskii, Stanislav, Oganesyan, Gagik, Poloskin, Dmitrii

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