Search Results - Polovodov, Y A

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  1. 1
    Modelling of asymmetric n-p junction enriched with charge carriers in equilibrium state

    Modelling of asymmetric n-p junction enriched with charge carriers in equilibrium state by Bogatov, N M, Grigoryan, L R, Kovalenko, A I, Nesterenko, I I, Polovodov, Y A

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  2. 2
    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy by Hahn, W., Lentali, J.-M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y.-R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., Peretti, J.

    Published in Physical review. B
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  3. 3
    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy by Hahn, W., Lentali, J.-M., Polovodov, P., Young, N., Nakamura, S., Speck, J S, Weisbuch, C., Filoche, M., Wu, Y.-R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., Peretti, J.

    Published in Physical review. B
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  4. 4
    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy by Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. -R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., Peretti, Jacques

    Published in Physical review. B
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  5. 5
    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy by Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. -R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., Peretti, J.

    Published in Physical review. B
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  6. 6
    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

    Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy by Hahn, W, J -M Lentali, Polovodov, P, Young, N, Nakamura, S, Speck, J S, Weisbuch, C, Filoche, M, Y-R, Wu, Piccardo, M, Maroun, F, Martinelli, L, Lassailly, Y, Peretti, J

    Published in arXiv.org
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