Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs by Akturk, A., McGarrity, J. M., Potbhare, S., Goldsman, N.

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Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation by Akturk, A, Holloway, M, Potbhare, S, Gundlach, D, Li, B, Goldsman, N, Peckerar, M, Cheung, K P

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Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs by Potbhare, S., Goldsman, N., Akturk, A., Gurfinkel, M., Lelis, A., Suehle, J.S.

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An enhanced specialized SiC power MOSFET simulation system by Dilli, Z., Akturk, A., Goldsman, N., Potbhare, S.

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Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A by Akturk, A., Peckerar, M., Eng, K., Hamlet, J., Potbhare, S., Longoria, E., Young, R., Gurrieri, T., Carroll, M.S., Goldsman, N.

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The amplitude of random telegraph noise: Scaling implications by Cheung, Kin P., Campbell, J. P., Potbhare, S., Oates, A.

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A Physical Model of High Temperature 4H-SiC MOSFETs by Potbhare, Siddharth, Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, F. Barry, Habersat, Daniel

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Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation by Potbhare, S., Goldsman, N., Pennington, G., McGarrity, J.M., Lelis, A.

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Electro-thermal simulation of silicon carbide power modules by Akturk, A., Goldsman, N., Potbhare, S.

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Ion implantation and SiC transistor performance by Gurfinkel, M., Potbhare, S., Xiong, H. D., Suehle, J. S., Shapira, Yoram, Lelis, A. J., Habersat, D., Goldsman, N.

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Compact modeling of 0.35μm SOI CMOS technology node for 4K DC operation using Verilog-A by Akturk, A., Peckerar, M., Eng, K., Hamlet, J., Potbhare, S., Longoria, E., Young, R., Gurrieri, T., Carroll, M.S., Goldsman, N.

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Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations by Ettisserry, D. P., Salemi, S., Goldsman, N., Potbhare, S., Akturk, A., Lelis, A.

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(Invited) Modeling and Simulation of Silicon Carbide Power Systems by Goldsman, Neil, Potbhare, Siddharth, Akturk, Akin, Salemi, Shahrzad, Lelis, Aivars

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Compact modeling of 0.35 km SOI CMOS technology node for 4 K DC operation using Verilog-A by Akturk, A, Peckerar, M, Eng, K, Hamlet, J, Potbhare, S, Longoria, E, Young, R, Gurrieri, T, Carroll, MS, Goldsman, N

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Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces by Akturk, A., Salemi, S., Goldsman, N., Potbhare, S., Lelis, A.

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On the amplitude of random telegraph noise by Cheung, K. P., Campbell, J. P., Potbhare, S., Oates, A.

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Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs by Potbhare, S., Akturk, A., Goldsman, N., Lelis, A.

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Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces by Pennington, G., Potbhare, S., McGarrity, J.M., Goldsman, N.

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Modeling and Characterization of Bias Stress-Induced Instability of SiC MOSFETs by Lelis, A.J., Potbhare, S., Habersat, D., Pennington, G., Goldsman, N.

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Modeling the Effect of Conduction Band Density of States on Interface Trap Occupation and Its Influence on 4H-SiC MOSFET Performance by Potbhare, S., Akturk, A., Goldsman, N., Lelis, A., Dhar, S., Sei-Hyung Ryu, Agarwal, A.

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