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Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage Ramp Tests
by
Zheng, Yongju
,
Potera, Rahul
,
Witt, Tony
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Improvements to the Analytical Model to Describe UIS Events
by
Steinmann, Philipp
,
Ganguly, Satyaki
,
Hull, Brett
,
Lam, Khiem
,
Lichtenwalner, Daniel J.
,
Park, Jae-Hyung
,
Potera, Rahul
,
Richmond, Jim
,
Ryu, Sei-Hyung
,
Sabri, Shadi
,
Van Brackle, Charles
,
Van Brunt, Edward
,
Williams, Elizabeth
Published in
IEEE transactions on electron devices
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Silicon Carbide Diodes in Power-Factor Correction Circuits: Device and Circuit Design Aspects
by
Potera, Rahul Radhakrishnan
,
Han, Timothy Junghee
Published in
IEEE power electronics magazine
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