GaN-based nanowires: From nanometric-scale characterization to light emitting diodes by Bavencove, A.-L., Tourbot, G., Pougeoise, E., Garcia, J., Gilet, P., Levy, F., André, B., Feuillet, G., Gayral, B., Daudin, B., Dang, Le Si

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Experimental Study of the Lasing Modes of 1.3- $\mu$ m Highly Strained InGaAs-GaAs Quantum-Well Oxide-Confined VCSELs by Pougeoise, E., Gilet, P., Grosse, P., Grenouillet, L., Chelnokov, A., Gerard, J.-M., Bouillard, J.-S., Lerondel, G., Blaize, S., Vilain, S., Bachelot, R., Royer, P., Hamelin, R., Berggren, J., Sundgren, P., Hammar, M.

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Experimental Study of the Lasing Modes of 1.3-[mu]m Highly Strained InGaAs-GaAs Quantum-Well Oxide- Confined VCSELs by Pougeoise, E, Gilet, P, Grosse, P, Grenouillet, L, Chelnokov, A, Gerard, J.-M., Bouillard, J.-S., Lerondel, G, Blaize, S, Vilain, S, Bachelot, R, Royer, P, Hamelin, R, Berggren, J, Sundgren, P, Hammar, M

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Experimental Study of the Lasing Modes of 1.3- \mum Highly Strained InGaAs-GaAs Quantum-Well Oxide-Confined VCSELs by Pougeoise, E., Gilet, P., Grosse, P., Grenouillet, L., Chelnokov, A., Gerard, J.-M., Bouillard, J.-S., Lerondel, G., Blaize, S., Vilain, S., Bachelot, R., Royer, P., Hamelin, R., Berggren, J., Sundgren, P., Hammar, M.

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Experimental study of the lasing modes of 1.3-ÎŒm highly strained InGaAs-GaAs quantum-well oxide-confined VCSELs by Pougeoise, E., Gilet, P., Grosse, P., Grenouillet, L., Chelnokov, A., Gerard, J. -M, Bouillard, J. -S, Lerondel, G., Blaize, S., Vilain, S., Bachelot, R., Royer, P., Hamelin, R., Berggren, Jesper, Sundgren, Petrus, Hammar, Mattias

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