Carbon doping of GaAs for heterojunction bipolar transistors: a comparison between MBE and CBE by Benchimol, J.L., Alexandre, F., Jourdan, N., Pougnet, A.M., Mellet, R., Sermage, B., Héliot, F., Dubon-Chevallier, C.

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Growth of InP in chemical beam epitaxy with high purity tertiarybutylphosphine by Hincelin, G., Zahzouh, M., Mellet, R., Pougnet, A.M.

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Growth of CuInSe2 by metallorganic chemical vapour deposition (MOCVD): new copper precursor by Duchemin, S., Artaud, M.C., Ouchen, F., Bougnot, J., Pougnet, A.M.

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Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane by Zahzouh, M., Hincelin, G., Mellet, R., Pougnet, A.M.

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Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE by Robein, D., Kazmierski, C., Pougnet, A.M., Rose, B.

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Spin susceptibility behaviour in the Bi2Sr2Can−1CunO2n+4 compounds : from underdoped to overdoped regime by Le Noc, L., Trokiner, A., Schneck, J., Pougnet, A.M., Morin, D., Savary, H., Yakubovskii, A., Mykhalyov, K.N., Verkhovskii, S.V.

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Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP by Soulière, V., Abraham, P., Bouix, J., Berthet, M.P., Monteil, Y., Pougnet, A.M., Mellet, R., Ougazzaden, A., Mircea, A.

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A new organoindium precursor for electronic materials by Soulière, V., Abraham, P., Sacilotti, M., Berthet, M.P., Bouix, J., Monteil, Y., Pougnet, A.M., Mellet, R., Ougazzaden, A., Mircéa, A.

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Spin susceptibility behaviour in the Bi 2Sr 2Ca n−1 Cu nO 2 n+4 compounds : from underdoped to overdoped regime by Le Noc, L., Trokiner, A., Schneck, J., Pougnet, A.M., Morin, D., Savary, H., Yakubovskii, A., Mykhalyov, K.N., Verkhovskii, S.V.

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Crystal growth and crystallographic data of some Ln2(MoO4)3 type mixed rare earth molybdates by Joukoff, B., Grimouille, G., Leroux, G., Daguet, C., Pougnet, A.M.

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Photoluminescence investigation of InGaAs-InGaAsP multiquantum wells for laser devices by Rao, E.V.K., Ougazzaden, A., Gao, Y., Thibierge, H., Pougnet, A.M., Mircea, A., Lugagne-Delpond, E., Voisin, P.

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sup 17 O nuclear-magnetic-resonance evidence for distinct carrier densities in the two types of CuO sub 2 planes of (Bi,Pb) sub 2 Sr sub 2 Ca sub 2 Cu sub 3 O sub y by Trokiner, A., Le Noc, L., Schneck, J., Pougnet, A.M., Mellet, R., Primot, J., Savary, H., Gao, Y.M., Aubry, S.

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