A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs by Sutton, A.K., Haugerud, B.M., Prakash, A.P.G., Bongim Jun, Cressler, J.D., Marshall, C.J., Marshall, P.W., Ladbury, R., Guarin, F., Joseph, A.J.

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An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator by Comeau, J.P., Najafizadeh, L., Andrews, J.M., Prakash, A.P.G., Cressler, J.D.

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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs by Sutton, A.K., Prakash, A.P.G., Bongim Jun, Enhai Zhao, Bellini, M., Pellish, J., Diestelhorst, R.M., Carts, M.A., Phan, A., Ladbury, R., Cressler, J.D., Marshall, Paul.W., Marshall, C.J., Reed, R.A., Schrimpf, R.D., Fleetwood, D.M.

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The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs by Prakash, A.P.G., Sutton, A.K., Diestelhorst, R.M., Espinel, G., Andrews, J., Bongim Jun, Cressler, J.D., Marshall, P.W., Marshall, C.J.

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Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics by Najafizadeh, L., Bellini, M., Prakash, A.P.G., Espinel, G.A., Cressler, J.D., Marshall, P.W., Marshall, C.J.

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Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices by Bongim Jun, Diestelhorst, R.M., Bellini, M., Espinel, G., Appaswamy, A., Prakash, A.P.G., Cressler, J.D., Dakai Chen, Schrimpf, R.D., Fleetwood, D.M., Turowski, M., Raman, A.

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The impact of substrate bias on proton damage in 130 nm CMOS technology by Haugerud, B.M., Venkataraman, S., Sutton, A.K., Prakash, A.P.G., Cressler, J.D., Niu, G., Marshall, P.W., Joseph, A.J.

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