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Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations
by
Chvala, Ales
,
Nagy, Lukas
,
Marek, Juraj
,
Priesol, Juraj
,
Donoval, Daniel
,
Blaho, Michal
,
Gregusova, Dagmar
,
Kuzmik, Jan
,
Satka, Alexander
Published in
IEEE transactions on electron devices
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Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique
by
Priesol, Juraj
,
Satka, Alexander
,
Chvala, Ales
,
Stoffels, Steve
,
Jaeger, Brice De
,
Decoutere, Stefaan
Published in
IEEE transactions on electron devices
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Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels
by
Stoklas, Roman
,
Chvala, Ales
,
Sichman, Peter
,
Hasenohrl, Stanislav
,
Hascik, Stefan
,
Priesol, Juraj
,
Satka, Alexander
,
Kuzmik, Jan
Published in
IEEE transactions on electron devices
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Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD
by
Gucmann, Filip
,
Nádaždy, Peter
,
Hušeková, Kristína
,
Dobročka, Edmund
,
Priesol, Juraj
,
Egyenes, Fridrich
,
Šatka, Alexander
,
Rosová, Alica
,
Ťapajna, Milan
Published in
Materials science in semiconductor processing
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Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer
by
Jiang, Quanzhong
,
Lewins, Christopher J
,
Allsopp, Duncan W. E
,
Bowen, Chris R
,
Wang, Wang N
,
Satka, Alexander
,
Priesol, Juraj
,
Uherek, Frantisek
Published in
Japanese Journal of Applied Physics
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