Search Results - Prokhorov, E. D.

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  1. 1
    Influence of the variband-layer thickness on the energy and frequency characteristics of Inx(z)Ga1 - x(z)As Gunn diodes

    Influence of the variband-layer thickness on the energy and frequency characteristics of Inx(z)Ga1 - x(z)As Gunn diodes by Arkusha, Yu V, Prokhorov, E D, Storozhenko, I P

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  2. 2
    Negative differential conductivity of semiconductor diode with resonance-tunnel border

    Negative differential conductivity of semiconductor diode with resonance-tunnel border by Prokhorov, E D, Botsula, O V

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  3. 3
    NDC of diodes with tunnel and resonant-tunneling borders

    NDC of diodes with tunnel and resonant-tunneling borders by Prokhorov, E D, Botsula, O V

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  4. 4
    Oscillation efficiency of transfer electrons nitrid diodes

    Oscillation efficiency of transfer electrons nitrid diodes by Prokhorov, E D, Botsula, O V

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  5. 5
    Simulation of Broadband Microwave Oscillations in the Gunn-Diode Sources Involving Impact Ionization

    Simulation of Broadband Microwave Oscillations in the Gunn-Diode Sources Involving Impact Ionization by Prokhorov, E.D., Pavlenko, D.V.

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  6. 6
    Frequency dependences of NDC for nitride compound calculated by Monte-Carlo techniques

    Frequency dependences of NDC for nitride compound calculated by Monte-Carlo techniques by Botsula, O V, Prokhorov, E D, Aidan, D S, Aidan, I A, Zabajzan, E N

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  7. 7
    Argumentation of growth velocity of monocrystals bismuth-antimony by method of floating-zone refining

    Argumentation of growth velocity of monocrystals bismuth-antimony by method of floating-zone refining by Plaksiy, V T, Kamyshanova, T I, Prokhorov, E D, Dyadchenko, A V, Chuyeshkov, D P

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  8. 8
    Influence of the variband-layer thickness on the energy and frequency characteristics of In x(z)Ga1 − x(z)As Gunn diodes

    Influence of the variband-layer thickness on the energy and frequency characteristics of In x(z)Ga1 − x(z)As Gunn diodes by Arkusha, Yu. V., Prokhorov, E. D., Storozhenko, I. P.

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  9. 9
    Simulation of Transferred Electron Devices with Linearly Graded Composition of 3-5 Threefold Semiconductor in Active Zone

    Simulation of Transferred Electron Devices with Linearly Graded Composition of 3-5 Threefold Semiconductor in Active Zone by Storozhenko, I. P., Prokhorov, E. D., Arkusha, Yu. V.

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  10. 10
    Modeling of the semiconductor devices with the IET and involving the impact ionization

    Modeling of the semiconductor devices with the IET and involving the impact ionization by Prokhorov, E.D., Pavlenko, D.V.

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  11. 11
    The two-dimensional model of Gunn diode involving impact ionization

    The two-dimensional model of Gunn diode involving impact ionization by Pavlenko, D.V., Prokhorov, E.D.

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  12. 12
    Resonance-tunneling diode with the tunnel anode (RTDTA)

    Resonance-tunneling diode with the tunnel anode (RTDTA) by Botsula, O.V., Prokhorov, E.D.

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  13. 13
    Simulation of short Gunn diode with resonant-tunneling cathode

    Simulation of short Gunn diode with resonant-tunneling cathode by Storozhenko, I.P., Prokhorov, E.D., Botsula, O.V.

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  14. 14
    Influence of the variband-layer thickness on the energy and frequency characteristics of In sub(x(z))Ga sub(1 - x(z))As Gunn diodes

    Influence of the variband-layer thickness on the energy and frequency characteristics of In sub(x(z))Ga sub(1 - x(z))As Gunn diodes by Arkusha, YuV, Prokhorov, ED, Storozhenko, I P

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  15. 15
    Temperature influence on the operation of wideband mm-wave GaAs oscillator

    Temperature influence on the operation of wideband mm-wave GaAs oscillator by Dyadchenko, A.V., Mishnyov, A.A., Prokhorov, E.D.

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  16. 16
    Microstrip GaAs mm-wave generator with electronic frequency tuning

    Microstrip GaAs mm-wave generator with electronic frequency tuning by Dyadchenko, A.V., Mishnyov, A.A., Prokhorov, E.D.

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  17. 17
    Wideband tunable MM-wave GaAs generator

    Wideband tunable MM-wave GaAs generator by Dyadchenko, A.V., Mishnyov, A.A., Prokhorov, E.D.

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  18. 18
    A powerful meter-wave pulse power source

    A powerful meter-wave pulse power source by Dyadchenko, A.V., Mishnyov, A.A., Prokhorov, E.D., Arkusha, Yu.V., Plaksiy, V.T.

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  19. 19
    Efficiency of tunnel frame diodes generation allowing for electrons intervalley transfer in GaAs

    Efficiency of tunnel frame diodes generation allowing for electrons intervalley transfer in GaAs by Prokhorov, E. D., Botsula, O. V., Klymenko, O. A.

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  20. 20
    Frequency Dependence Of Mm-wave Gaas Gunn Diode Oscillators Efficiency Operated On 2-nd Or 3-rd Harmonic

    Frequency Dependence Of Mm-wave Gaas Gunn Diode Oscillators Efficiency Operated On 2-nd Or 3-rd Harmonic by Dyadchenko, A.V., Mishnojov, A.A., Prokhorov, E.D.

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