Search Results - Prokhorov, E.D.

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  1. 1
    Diode with cathode static domain as the source of HF-noise

    Diode with cathode static domain as the source of HF-noise by Prokhorov, E.D., Botsula, O.V.

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  2. 2
    Influence of Impact Ionization on Operation Efficiency of InN, GaN, AIN LSA-Diodes

    Influence of Impact Ionization on Operation Efficiency of InN, GaN, AIN LSA-Diodes by Pavlenko, D.V., Prokhorov, E.D.

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  3. 3
    The Spectrum of Current Oscillations of Gunn Diodes with the Impact Ionization in Moving Domains

    The Spectrum of Current Oscillations of Gunn Diodes with the Impact Ionization in Moving Domains by Pavlenko, D.V., Prokhorov, E.D.

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  4. 4
    Efficient simulation of numerical models for semiconductor devices

    Efficient simulation of numerical models for semiconductor devices by Pavlenko, D.V., Prokhorov, E.D., Beletsky, N.I.

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  5. 5
    Frequency multiplication in ted diodes with impact ionization on InN, GaN, AlN

    Frequency multiplication in ted diodes with impact ionization on InN, GaN, AlN by Prokhorov, E.D., Botsula, O.V., Grischenko, I.A.

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  6. 6
    Research of the volt-watt sensitivity of metal-semimetal BiSb contact detectors of microwave radiation, depending on contact geometry

    Research of the volt-watt sensitivity of metal-semimetal BiSb contact detectors of microwave radiation, depending on contact geometry by Plaksiy, V.T., Arkhipov, A.V., Prokhorov, E.D., Dyadchenko, A.V., Chuyeshkov, D.P.

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  7. 7
    Application of Multilevel Adaptation Technique for Numerical Modeling of Gunn Diodes

    Application of Multilevel Adaptation Technique for Numerical Modeling of Gunn Diodes by Pavlenko, D.V., Prokhorov, E.D.

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  8. 8
    The Broadband GaAs-Generator of MM - Range with Electronic Frequency Tuning

    The Broadband GaAs-Generator of MM - Range with Electronic Frequency Tuning by Dyadchenko, A.V., Prokhorov, E.D.

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  9. 9
    Graded band gap diodes with static domain

    Graded band gap diodes with static domain by Storozhenko, I.P., Prokhorov, E.D., Botsula, O.V., Arkusha, Yu.V.

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  10. 10
    Harmonic generation in transfer electron GaN diodes with impact ionization

    Harmonic generation in transfer electron GaN diodes with impact ionization by Botsula, O.V., Pavlenko, D.V., Prokhorov, E.D., Vilnivetsky, S.S.

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  11. 11
    Power and frequency characteristics of Gunn-diodes on the basis of GaN

    Power and frequency characteristics of Gunn-diodes on the basis of GaN by Arkusha, Y.V., Prokhorov, E.D., Storozhenko, I.P.

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  12. 12
    AIN/AlxGa1-xN Resonance-Tunnel Diodes

    AIN/AlxGa1-xN Resonance-Tunnel Diodes by Botsula, O.V., Prokhorov, E.D., Suzdaltsev, A.V., Djadchenko, A.V.

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  13. 13
    Two-dimensional simulation of devices with IET and allowing impact ionization

    Two-dimensional simulation of devices with IET and allowing impact ionization by Prokhorov, E.D., Pavlenko, D.V.

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  14. 14
    Oscillation Efficiency of Diodes with Al0,3Ga0,7As/GaAs Cathode

    Oscillation Efficiency of Diodes with Al0,3Ga0,7As/GaAs Cathode by Botsula, O.V., Prokhorov, E.D., Storozhenko, I.P.

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  15. 15
    Oscillation Efficiency of the Diodes with the Cathode Al0,3Ga0,7As/GaAs

    Oscillation Efficiency of the Diodes with the Cathode Al0,3Ga0,7As/GaAs by Botsula, O.V., Prokhorov, E.D., Storozhenko, I.P.

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  16. 16
    Detector of microwave radiation on the basis of Bi1−xSbx film

    Detector of microwave radiation on the basis of Bi1−xSbx film by Plaksiy, V.T., Arkhipov, A.V., Botsula, O.V., Prokhorov, E.D., Dyadchenko, A.V., Chueshkov, D.P., Shalaev, V.A.

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  17. 17
    Simulation of Broadband Microwave Oscillations in the Gunn-Diode Sources Involving Impact Ionization

    Simulation of Broadband Microwave Oscillations in the Gunn-Diode Sources Involving Impact Ionization by Prokhorov, E.D., Pavlenko, D.V.

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  18. 18
    InP Gunn Diodes with Forward Bias Heterocathode

    InP Gunn Diodes with Forward Bias Heterocathode by Storozhenko, I.P., Arkusha, Yu.V., Prokhorov, E.D., Botsula, O.V.

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  19. 19
    Power and frequency characteristics of Gunn diodes with two active regions InP/sub 0.7/As/sub 0.3/-In/sub 0.4/Ga/sub 0.6/As

    Power and frequency characteristics of Gunn diodes with two active regions InP/sub 0.7/As/sub 0.3/-In/sub 0.4/Ga/sub 0.6/As by Arkusha, Yu.V., Prokhorov, E.D., Storozhenko, I.P.

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  20. 20
    Broadband Detectors of EHF Region on the Basis of Semimetal B1-XSBX

    Broadband Detectors of EHF Region on the Basis of Semimetal B1-XSBX by Plaksiy, V.T., Arkhipov, A.V., Dyadchenko, A.V., Prokhorov, E.D., Chueshkov, D.P.

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