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Search Results - Prunty, T.R.
Search Results - Prunty, T.R.
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Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
by
Hyungtak Kim
,
Thompson, R.M.
,
Tilak, V.
,
Prunty, T.R.
,
Shealy, J.R.
,
Eastman, L.F.
Published in
IEEE electron device letters
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Growth and passivation of AlGaN/GaN heterostructures
by
Shealy, J.R.
,
Prunty, T.R.
,
Chumbes, E.M.
,
Ridley, B.K.
Published in
Journal of crystal growth
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Signal generation, control, and frequency conversion AlGaN/GaN HEMT MMICs
by
Kaper, V.S.
,
Thompson, R.M.
,
Prunty, T.R.
,
Shealy, J.R.
Published in
IEEE transactions on microwave theory and techniques
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High-power monolithic AlGaN/GaN HEMT oscillator
by
Kaper, V.S.
,
Tilak, V.
,
Hyungtak Kim
,
Vertiatchikh, A.V.
,
Thompson, R.M.
,
Prunty, T.R.
,
Eastman, L.F.
,
Shealy, J.R.
Published in
IEEE journal of solid-state circuits
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Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors
by
Prunty, T.R.
,
Smart, J.A.
,
Chumbes, E.N.
,
Ridley, B.K.
,
Eastman, L.F.
,
Shealy, J.R.
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Conference Proceeding
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Aluminum Gallium Nitride
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Algan/Gan High Electron-Mobility Transistor
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B1. Nitrides
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