Search Results - Pugacheva, T.S.

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  1. 1
    Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing by Umirzakov, B.E., Pugacheva, T.S., Tashatov, A.T., Tashmukhamedova, D.A.

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  2. 2
    Computer simulation of SiC and B 4C sputtering by Ar + and He + ions bombardment

    Computer simulation of SiC and B 4C sputtering by Ar + and He + ions bombardment by Pugacheva, T.S., Jurabekova, F.G., Miyagawa, Y., Valiev, S.Kh

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  3. 3
    Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

    Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment by Pugacheva, T.S., Jurabekova, F.G., Miyagawa, Y., Valiev, S.Kh

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    The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

    The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation by Valiev, S.H., Pugacheva, T.S., Jurabekova, F.G., Lem, S.A., Miyagawa, Y.

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  5. 5
    Computer simulation of ion implantation with visual observation of the implantation profiles

    Computer simulation of ion implantation with visual observation of the implantation profiles by Djurabekova, F.G., Pugacheva, T.S., Umarov, F.F., Yugay, S.V.

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