Fabrication of ZnO-based metal–insulator–semiconductor diodes by ion implantation by Alivov, Ya.I., Look, D.C., Ataev, B.M., Chukichev, M.V., Mamedov, V.V., Zinenko, V.I., Agafonov, Yu.A., Pustovit, A.N.

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High-dose V+ implantation in ZnO thin film structures by Vyatkin, A.F., Zinenko, V.I., Agaphonov, Yu.A., Pustovit, A.N., Roshchupkin, D.V., Reuss, F., Kirchner, C., Kling, R., Waag, A.

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Proton and temperature-induced competitive segregation of iron on surface and volume sinks of silica by Shilobreeva, S.N., Kashkarov, L.L., Barabanenkov, M.Yu, Pustovit, A.N., Zinenko, V.I., Agafonov, Yu.A.

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Polyenergy ion beam synthesis of buried oxynitride layer in silicon by Barabanenkov, M.Yu, Agafonov, Yu.A., Mordkovich, V.N., Pustovit, A.N., Vyatkin, A.F., Zinenko, V.I.

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Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/Si〈Sb〉 heterostructures by Avrutin, V.S., Barabanenkov, M.Yu, Izyumskaya, N.F., Pustovit, A.N., Vyatkin, A.F., Loiko, N.N.

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Optical and electrical properties of ZnMnO layers grown by peroxide MBE by Avrutin, V., Izyumskaya, N., Özgür, Ü., El-Shaer, A., Lee, H., Schoch, W., Reuss, F., Beshenkov, V.G., Pustovit, A.N., Mofor, A. Che, Bakin, A., Morkoç, H., Waag, A.

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Preparation of high purity yttrium single crystals by electrotransport by Volkov, V.T, Nikiforova, T.V, Ionov, A.M, Pustovit, A.N, Sikharulidse, G.G

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Ultra-shallow p-n junction formation by ion implantation at high energy? by Vyatkin, A.F., Zinenko, V.I., Pustovit, A.N., Agafonov, Yu.A.

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